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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 10, Pages 1343–1348
DOI: https://doi.org/10.21883/FTP.2019.10.48287.33 (Mi phts5376) 		 
XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019

Coherence dynamics of the exciton-polariton system in GaAs microcavities under pulse resonant photoexcitation

V. D. Kulakovskiiab, A. A. Demeneva

a Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
b National Research University "Higher School of Economics", Moscow
Full-text PDF (285 kB)
DOI: https://doi.org/10.21883/FTP.2019.10.48287.33
Abstract: It is found that exciton-polariton systems resonantly excited in GaAs semiconductor microcavities by coherent picosecond laser pulses inherit the high coherence of the laser beam and retain it for their lifetime ( $>$ 100 ps), while the coherence-formation time in polariton systems resonantly excited by incoherent pulses without excitation of the exciton reservoir exceeds 200 ps.
Keywords: exciton polaritons, Bose–Einstein condensate, spatial coherence.
Funding agency Grant number
Russian Academy of Sciences - Federal Agency for Scientific Organizations 5
Received: 24.04.2019
Revised: 29.04.2019
Accepted: 29.04.2019
English version:
Semiconductors, 2019, Volume 53, Issue 10, Pages 1308–1313
DOI: https://doi.org/10.1134/S1063782619100129
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. D. Kulakovskii, A. A. Demenev, “Coherence dynamics of the exciton-polariton system in GaAs microcavities under pulse resonant photoexcitation”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1343–1348; Semiconductors, 53:10 (2019), 1308–1313
Citation in format AMSBIB
\Bibitem{KulDem19}
\by V.~D.~Kulakovskii, A.~A.~Demenev
\paper Coherence dynamics of the exciton-polariton system in GaAs microcavities under pulse resonant photoexcitation
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 10
\pages 1343--1348
\mathnet{http://mi.mathnet.ru/phts5376}
\crossref{https://doi.org/10.21883/FTP.2019.10.48287.33}
\elib{https://elibrary.ru/item.asp?id=41174855}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 10
\pages 1308--1313
\crossref{https://doi.org/10.1134/S1063782619100129}
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