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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 10, Pages 1311–1314
DOI: https://doi.org/10.21883/FTP.2019.10.48282.22 (Mi phts5371) 		 
XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019

Vertical field-effect transistor with control $p$–$n$-junction based on GaAs

N. V. Vostokova, V. M. Daniltseva, S. A. Kraeva, V. L. Kryukovb, E. V. Skorokhodova, S. S. Strelchenkob, V. I. Shashkina

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b OOO "MeGa Epitech", Kaluga, Russia
Full-text PDF (780 kB)
DOI: https://doi.org/10.21883/FTP.2019.10.48282.22
Abstract: The first results on the creation of an original power GaAs field-effect transistor with a vertical channel controlled by the $p$–$n$ junction are presented. The main technological feature is the use of two separate processes of epitaxial growth in the formation of the transistor structure. The part of the transistor containing the drain, drift and gate areas is grown by liquid-phase epitaxy. The technology of organometallic gas-phase epitaxy is used to form the areas of the channel and the source.
Keywords: power vertical field-effect transistor, GaAs.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 0035-2014-0205
Investigations are performed in the scope of fulfillment of the state order for the Institute for Physics of Microstructures, Russian Academy of Sciences, theme no. 0035-2014-0205.
Received: 24.04.2019
Revised: 29.04.2019
Accepted: 29.04.2019
English version:
Semiconductors, 2019, Volume 53, Issue 10, Pages 1279–1281
DOI: https://doi.org/10.1134/S1063782619100245
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. V. Vostokov, V. M. Daniltsev, S. A. Kraev, V. L. Kryukov, E. V. Skorokhodov, S. S. Strelchenko, V. I. Shashkin, “Vertical field-effect transistor with control $p$–$n$-junction based on GaAs”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1311–1314; Semiconductors, 53:10 (2019), 1279–1281
Citation in format AMSBIB
\Bibitem{VosDanKra19}
\by N.~V.~Vostokov, V.~M.~Daniltsev, S.~A.~Kraev, V.~L.~Kryukov, E.~V.~Skorokhodov, S.~S.~Strelchenko, V.~I.~Shashkin
\paper Vertical field-effect transistor with control $p$--$n$-junction based on GaAs
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 10
\pages 1311--1314
\mathnet{http://mi.mathnet.ru/phts5371}
\crossref{https://doi.org/10.21883/FTP.2019.10.48282.22}
\elib{https://elibrary.ru/item.asp?id=41174847}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 10
\pages 1279--1281
\crossref{https://doi.org/10.1134/S1063782619100245}
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