Structure of Se$_{95}$As$_{5}$ chalcogenide glassy semiconductor doped by EuF$_3$ impurity

The local structure of film samples of chalcogenide glassy semiconductor Se$_{95}$As$_{5}$ and Se$_{95}$As$_{5}$(EuF$_{3}$)$_{x}$ ($x$ = 0.01–1 at%) have been studied by X-ray diffraction and Raman scattering. The “quasi-period” of the structure, the correlation length, the structural elements and chemical bonds that form the amorphous matrix of the materials studied have been determined. Interpretation of results obtained has been carried out within the framework of the Elliot voidscluster model, taking into account the chemical activity of europium ions.