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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 11, Pages 1497–1504
DOI: https://doi.org/10.21883/FTP.2019.11.48444.9110
(Mi phts5354)
 

Surface, interfaces, thin films

Effect of ion-beam processing during RF magnetron sputtering on the properties of ZnO films

P. N. Krilov, S. S. Alalykin, E. A. Durman, R. M. Zakirova, I. V. Fedotova

Udmurt State University, Izhevsk
Abstract: The effect of ion-beam processing alternating with magnetron sputtering on the properties of zinc-oxide thin films is investigated. It is shown that ion-beam processing reduces the growth rate, coherent-scattering-region sizes, and the resistivity. The stoichiometric index, band gap, and refractive index increase. The transparency of the films in the weak absorption region remains unchanged.
Keywords: ion-beam processing, zinc oxide, magnetron sputtering.
Received: 21.03.2019
Revised: 07.06.2019
Accepted: 17.06.2019
English version:
Semiconductors, 2019, Volume 53, Issue 11, Pages 1457–1464
DOI: https://doi.org/10.1134/S1063782619110095
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. N. Krilov, S. S. Alalykin, E. A. Durman, R. M. Zakirova, I. V. Fedotova, “Effect of ion-beam processing during RF magnetron sputtering on the properties of ZnO films”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1497–1504; Semiconductors, 53:11 (2019), 1457–1464
Citation in format AMSBIB
\Bibitem{KriAlaDur19}
\by P.~N.~Krilov, S.~S.~Alalykin, E.~A.~Durman, R.~M.~Zakirova, I.~V.~Fedotova
\paper Effect of ion-beam processing during RF magnetron sputtering on the properties of ZnO films
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 11
\pages 1497--1504
\mathnet{http://mi.mathnet.ru/phts5354}
\crossref{https://doi.org/10.21883/FTP.2019.11.48444.9110}
\elib{https://elibrary.ru/item.asp?id=41300648}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 11
\pages 1457--1464
\crossref{https://doi.org/10.1134/S1063782619110095}
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