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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 12, Pages 1669–1673
DOI: https://doi.org/10.21883/FTP.2019.12.48624.9176
(Mi phts5332)
 

This article is cited in 1 scientific paper (total in 1 paper)

Amorphous, glassy, organic semiconductors

Parameters of lateral and unsteady cord currents in a cylindrical chalcogenide glassy semiconductor

N. V. Sovtus, K. J. Mynbaev

Ioffe Institute, St. Petersburg
Full-text PDF (188 kB) Citations (1)
Abstract: The heat-conduction equation describing the current cord in a semiconductor is approximately solved for a Ge–Sb–Te semiconductor system of cylindrical configuration. It is shown that the cord current at infinitely long times is proportional to the squared maximum temperature at the cord center and inversely proportional to the applied electric field. The scale of the lateral current perpendicular to the main cord current is estimated. It is found that the lateral current is low in comparison with the cord current; hence, the formation of lateral cords growing from the main cord is highly improbable.
Keywords: chalcogenide glassy semiconductors, memory effect, current crowding, lateral current.
Received: 29.05.2019
Revised: 08.07.2019
Accepted: 10.07.2019
English version:
Semiconductors, 2019, Volume 53, Issue 12, Pages 1651–1655
DOI: https://doi.org/10.1134/S1063782619160279
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. V. Sovtus, K. J. Mynbaev, “Parameters of lateral and unsteady cord currents in a cylindrical chalcogenide glassy semiconductor”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1669–1673; Semiconductors, 53:12 (2019), 1651–1655
Citation in format AMSBIB
\Bibitem{SovMyn19}
\by N.~V.~Sovtus, K.~J.~Mynbaev
\paper Parameters of lateral and unsteady cord currents in a cylindrical chalcogenide glassy semiconductor
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 12
\pages 1669--1673
\mathnet{http://mi.mathnet.ru/phts5332}
\crossref{https://doi.org/10.21883/FTP.2019.12.48624.9176}
\elib{https://elibrary.ru/item.asp?id=41848193}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 12
\pages 1651--1655
\crossref{https://doi.org/10.1134/S1063782619160279}
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  • https://www.mathnet.ru/eng/phts/v53/i12/p1669
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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