Charge transfer in gap structures based on the chalcogenide system (As$_{2}$Se$_{3}$)$_{100-x}$Bi$_{x}$

The results of investigating charge-transfer processes in thin layers of a vitreous system (As$_{2}$Se$_{3}$)$_{100-x}$Bi$_{x}$ are presented. A power-law dependence of the conductivity on the frequency and a decrease in the exponent s with increasing temperature are found. Charge transfer is a thermally activated process with two regions in the temperature dependence of the conductivity with the activation energies $E_1$ = 0.12 $\pm$ 0.01 eV and $E_2$ = 0.23 $\pm$ 0.01 eV, respectively. The results are explained in terms of the correlated barrier hopping (CBH) model of hopping conductivity in disordered systems. The main microparameters of the system are calculated: the density of localized states $(N)$, the hopping length $(R_\omega)$, and the largest height of the potential barrier $(W_M)$.