Effect of the samarium impurity on the local structure of Se$_{95}$Te$_{5}$ chalcogenide glassy semiconductor and current passage through Al–Se$_{95}$Te$_{5}\langle\mathrm{Sm}\rangle$–Te structures

Effect of samarium doping on the local structure and morphological features of films surface of the Se$_{95}$Te$_{5}$ chalcogenide glassy semiconductor system have been investigated by X-ray analysis and atomic force microscopy methods, and the influence of doping on the current passing mechanism through the Al–Se$_{95}$Te$_{5}\langle\mathrm{Sm}\rangle$–Te structures have been also considered by measuring the current-voltage characteristics in a stationary mode. The results obtained are interpreted on the basis of the theory of Lampert injection currents, the Elliott void-cluster model and the Mott and Street charged defect model proposed for chalcogenide glasses.