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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 12, Pages 1621–1624
DOI: https://doi.org/10.21883/FTP.2019.12.48614.9221 (Mi phts5322) 		 
Electronic properties of semiconductors

Temperature dependence of the band gap of MnAgIn$_{7}$S$_{12}$ single crystals

I. V. Bondar'a, B. T. Chana, V. N. Pavlovskiib, I. E. Svitsiankoub, G. P. Yablonskiib

a Belarussian State University of Computer Science and Radioelectronic Engineering, Minsk, Belarus
b B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk
Full-text PDF (259 kB)
DOI: https://doi.org/10.21883/FTP.2019.12.48614.9221
Abstract: MnAgIn$_{7}$S$_{12}$ single crystals 16 mm in diameter and $\sim$40 mm in length are grown by planar crystallization of the melt. It is shown that the material grown crystallizes with the formation of the cubic spinel structure. From the transmittance spectra recorded in the region of fundamental absorption in the temperature range 10–320 K, the band gap $E_g$ of the single crystals and its temperature dependence are determined. The dependence has a shape typical of most semiconductor materials: as the temperature is lowered, the band gap $E_g$ increases. A calculation is carried out, and it is shown that the calculated values are in agreement with the experimental data.
Keywords: single crystals, cubic spinel structure, transmittance spectra, band gap.
Funding agency Grant number
Belarusian Republican Foundation for Fundamental Research Ф16-028
The study was supported by the Belarusian Republican Foundation for Fundamental Research, project no. F16-028.
Received: 23.07.2019
Revised: 29.07.2019
Accepted: 29.07.2019
English version:
Semiconductors, 2019, Volume 53, Issue 12, Pages 1593–1596
DOI: https://doi.org/10.1134/S106378261916005X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. V. Bondar', B. T. Chan, V. N. Pavlovskii, I. E. Svitsiankou, G. P. Yablonskii, “Temperature dependence of the band gap of MnAgIn$_{7}$S$_{12}$ single crystals”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1621–1624; Semiconductors, 53:12 (2019), 1593–1596
Citation in format AMSBIB
\Bibitem{BonChaPav19}
\by I.~V.~Bondar', B.~T.~Chan, V.~N.~Pavlovskii, I.~E.~Svitsiankou, G.~P.~Yablonskii
\paper Temperature dependence of the band gap of MnAgIn$_{7}$S$_{12}$ single crystals
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 12
\pages 1621--1624
\mathnet{http://mi.mathnet.ru/phts5322}
\crossref{https://doi.org/10.21883/FTP.2019.12.48614.9221}
\elib{https://elibrary.ru/item.asp?id=41848182}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 12
\pages 1593--1596
\crossref{https://doi.org/10.1134/S106378261916005X}
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