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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 1, Pages 103–110
DOI: https://doi.org/10.21883/FTP.2020.01.48784.9233
(Mi phts5316)
 

This article is cited in 1 scientific paper (total in 1 paper)

Manufacturing, processing, testing of materials and structures

Application of high-frequency EPR spectroscopy for the identification and separation of nitrogen and vanadium sites in silicon carbide crystals and heterostructures

E. V. Edinach, A. D. Krivoruchko, A. S. Gurin, M. V. Muzafarova, I. V. Il'in, R. A. Babunts, N. G. Romanov, A. G. Badalyan, P. G. Baranov

Ioffe Institute, St. Petersburg
Full-text PDF (900 kB) Citations (1)
Abstract: The advantage of the high-frequency spectroscopy of electron paramagnetic resonance (EPR) for the identification of nitrogen donors and a deep compensating vanadium impurity in various crystallographic positions of the silicon-carbide crystal is shown. Measurements are performed using a new generation EPR spectrometer operating in the continuous wave and pulsed modes at frequencies of 94 and 130 GHz in a wide range of magnetic fields (-7–7 T) and temperatures (1.5–300 K). A magneto-optical closed-cycle cryogenic system (Spectormag PT), highly stable generators (94 and 130 GHz), and a cavity-free system for supplying microwave power to the sample are used.
Keywords: electron paramagnetic resonance, electron spin echo, semiconductors, silicon carbide, donor impurities.
Funding agency Grant number
Russian Foundation for Basic Research 19-52-12058
Deutsche Forschungsgemeinschaft ICRC TRR160
This work was supported by the Russian Foundation for Basic Research under grant no. 19-52-12058 and Deutsche Forschungsgemeinschaft (DFG) via ICRC TRR160 (Project C7).
Received: 02.08.2019
Revised: 12.08.2019
Accepted: 12.08.2019
English version:
Semiconductors, 2020, Volume 54, Issue 1, Pages 150–156
DOI: https://doi.org/10.1134/S1063782620010066
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. V. Edinach, A. D. Krivoruchko, A. S. Gurin, M. V. Muzafarova, I. V. Il'in, R. A. Babunts, N. G. Romanov, A. G. Badalyan, P. G. Baranov, “Application of high-frequency EPR spectroscopy for the identification and separation of nitrogen and vanadium sites in silicon carbide crystals and heterostructures”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 103–110; Semiconductors, 54:1 (2020), 150–156
Citation in format AMSBIB
\Bibitem{EdiKriGur20}
\by E.~V.~Edinach, A.~D.~Krivoruchko, A.~S.~Gurin, M.~V.~Muzafarova, I.~V.~Il'in, R.~A.~Babunts, N.~G.~Romanov, A.~G.~Badalyan, P.~G.~Baranov
\paper Application of high-frequency EPR spectroscopy for the identification and separation of nitrogen and vanadium sites in silicon carbide crystals and heterostructures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 1
\pages 103--110
\mathnet{http://mi.mathnet.ru/phts5316}
\crossref{https://doi.org/10.21883/FTP.2020.01.48784.9233}
\elib{https://elibrary.ru/item.asp?id=42571080}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 1
\pages 150--156
\crossref{https://doi.org/10.1134/S1063782620010066}
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  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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