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Semiconductor physics
Temperature dependence of losses in mechanical resonator fabricated via the direct bonding of silicon strips
L. G. Prokhorova, A. V. Svetaeva, B. S. Luninb, N. R. Zapotylkoc, A. A. Katkovc, V. P. Mitrofanova a Faculty of Physics, Lomonosov Moscow State University
b Lomonosov Moscow State University, Faculty of Chemistry
c Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
Abstract:
Cooling of devices made of monocrystalline silicon to a temperature of 123 K, at which the coefficient of thermal expansion of silicon exhibits a zero crossing, improves their stability and reduces noise. In the temperature range (100 – 295 K), the temperature dependences of the losses (damping) in a tuning fork mechanical resonator made of silicon strips and connected by direct bonding technique were investigated. This allows non-destructive monitoring of the quality of the bonding, as well as to identify the peculiarities of behavior and changes that occur at the bonding interface over time.
Keywords:
silicon wafer, direct bonding, mechanical resonator, zero-crossing temperature of coefficient of thermal expansion.
Received: 19.08.2019 Revised: 05.09.2019 Accepted: 10.09.2019
Citation:
L. G. Prokhorov, A. V. Svetaev, B. S. Lunin, N. R. Zapotylko, A. A. Katkov, V. P. Mitrofanov, “Temperature dependence of losses in mechanical resonator fabricated via the direct bonding of silicon strips”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 74–78; Semiconductors, 54:1 (2020), 117–121
Linking options:
https://www.mathnet.ru/eng/phts5310 https://www.mathnet.ru/eng/phts/v54/i1/p74
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