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Semiconductor physics
Multidimensional $dU/dt$ effect in high-power thyristors
S. N. Yurkov, T. T. Ìnatsakanov, A. G. Tandoev National Research University "Moscow Power Engineering Institute"
Abstract:
The method allowing to take into account the influence of the design peculiarities of a power thyristor on its $dU/dt$ parameter is described. A simple model is proposed, that makes it possible to find the parameters of the auxiliary thyristor structure that belongs to the regenera-tive control gate and provides the given value of the thyristor $dU/dt$ parameter. The minimum possible value of turn-on current of the thyristor, limited by a given value of the maximum rate of voltage rise, is found.
Keywords:
power thyristor, $dU/dt$-effect, non-uniform effect, turn-on current.
Received: 11.04.2019 Revised: 23.07.2019 Accepted: 29.08.2019
Citation:
S. N. Yurkov, T. T. Ìnatsakanov, A. G. Tandoev, “Multidimensional $dU/dt$ effect in high-power thyristors”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 69–73; Semiconductors, 54:1 (2020), 112–116
Linking options:
https://www.mathnet.ru/eng/phts5309 https://www.mathnet.ru/eng/phts/v54/i1/p69
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