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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 1, Pages 69–73
DOI: https://doi.org/10.21883/FTP.2020.01.48777.9137 (Mi phts5309) 		 
Semiconductor physics

Multidimensional $dU/dt$ effect in high-power thyristors

S. N. Yurkov, T. T. Ìnatsakanov, A. G. Tandoev

National Research University "Moscow Power Engineering Institute"
Full-text PDF (113 kB)
DOI: https://doi.org/10.21883/FTP.2020.01.48777.9137
Abstract: The method allowing to take into account the influence of the design peculiarities of a power thyristor on its $dU/dt$ parameter is described. A simple model is proposed, that makes it possible to find the parameters of the auxiliary thyristor structure that belongs to the regenera-tive control gate and provides the given value of the thyristor $dU/dt$ parameter. The minimum possible value of turn-on current of the thyristor, limited by a given value of the maximum rate of voltage rise, is found.
Keywords: power thyristor, $dU/dt$-effect, non-uniform effect, turn-on current.
Received: 11.04.2019
Revised: 23.07.2019
Accepted: 29.08.2019
English version:
Semiconductors, 2020, Volume 54, Issue 1, Pages 112–116
DOI: https://doi.org/10.1134/S1063782620010273
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. N. Yurkov, T. T. Ìnatsakanov, A. G. Tandoev, “Multidimensional $dU/dt$ effect in high-power thyristors”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 69–73; Semiconductors, 54:1 (2020), 112–116
Citation in format AMSBIB
\Bibitem{YurÌnaTan20}
\by S.~N.~Yurkov, T.~T.~Ìnatsakanov, A.~G.~Tandoev
\paper Multidimensional $dU/dt$ effect in high-power thyristors
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 1
\pages 69--73
\mathnet{http://mi.mathnet.ru/phts5309}
\crossref{https://doi.org/10.21883/FTP.2020.01.48777.9137}
\elib{https://elibrary.ru/item.asp?id=42571073}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 1
\pages 112--116
\crossref{https://doi.org/10.1134/S1063782620010273}
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