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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 1, Page 56 (Mi phts5304)  
This article is cited in 5 scientific papers (total in 5 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Performance enhancement of GeSn transistor laser with symmetric and asymmetric multiple quantum well in the base

Soumava Ghosh, Bratati Mukhopadhyay, G. Sen

Institute of Radio Physics and Electronics, Kolkata, India
Full-text PDF (25 kB) Citations (5)
Abstract: The performance of a Multiple Quantum Well (MQW) Heterojunction Bipolar Transistor Laser (HBTL) has been studied using GeSn alloy. Both symmetric and asymmetric quantum wells have been considered. Main analysis is focused on finding the minority carrier concentration in the base, the base threshold current, light output power of the device and the values are compared with GeSn based Single Quantum Well and InGaAs based Multiple Quantum Well Transistor Laser.
Keywords: HBTL, SQW, S-MQW, A-MQW.
Funding agency Grant number
Government of India GITA/DST/TWN/P-63/2015
Junior Research Fellowship (JRF), India
This work is supported under India-Taiwan Program in Science and Technology, Project no. GITA/DST/TWN/P-63/2015 by Department of Science and Technology (DST), Govt. of India. The first author (SG) receives financial support from this project under the Junior Research Fellowship (JRF) award.
Received: 19.07.2019
Revised: 06.08.2019
Accepted: 06.08.2019
English version:
Semiconductors, 2020, Volume 54, Issue 1, Pages 77–84
DOI: https://doi.org/10.1134/S1063782620010212
Bibliographic databases:
Document Type: Article
Language: English
Citation: Soumava Ghosh, Bratati Mukhopadhyay, G. Sen, “Performance enhancement of GeSn transistor laser with symmetric and asymmetric multiple quantum well in the base”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 56; Semiconductors, 54:1 (2020), 77–84
Citation in format AMSBIB
\Bibitem{GhoMukSen20}
\by Soumava~Ghosh, Bratati~Mukhopadhyay, G.~Sen
\paper Performance enhancement of GeSn transistor laser with symmetric and asymmetric multiple quantum well in the base
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 1
\pages 56
\mathnet{http://mi.mathnet.ru/phts5304}
\elib{https://elibrary.ru/item.asp?id=42571068}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 1
\pages 77--84
\crossref{https://doi.org/10.1134/S1063782620010212}
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    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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