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This article is cited in 2 scientific papers (total in 2 papers)
Spectroscopy, interaction with radiation
Study of the luminescence power of excitons and impurity–defect centers excited via two-photon absorption
A. A. Gladilin, V. P. Danilov, N. N. Il'ichev, V. P. Kalinushkin, M. I. Studenikin, O. V. Uvarov, V. A. Chapnin, A. V. Ryabova, A. V. Sidorin, È. S. Gulyamova, V. V. Tumorin, P. P. Pashinin Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
Abstract:
The effect of the average power of femtosecond laser radiation on the average luminescence power of excitons and impurity–defect centers on the two-photon excitation of the electron system of a crystal is studied experimentally and theoretically using ZnSe : Fe$^{2+}$ single crystals as an example. It is experimentally shown that, in the region of excitation powers under consideration, the average luminescence power of excitons in the crystal is proportional to the 4th power of the average excitation-radiation power. The average luminescence power of impurity–defect centers is of quadratic character. A theory is developed to interpret the experimentally observed dependences. It is noted that the dependence of the luminescence power of a crystal on the pump power upon two-photon excitation can be used to estimate the degree of contamination of the crystal with impurity–defect centers.
Keywords:
semiconductors, two-photon excitation of luminescence.
Received: 18.04.2019 Revised: 03.09.2019 Accepted: 04.09.2019
Citation:
A. A. Gladilin, V. P. Danilov, N. N. Il'ichev, V. P. Kalinushkin, M. I. Studenikin, O. V. Uvarov, V. A. Chapnin, A. V. Ryabova, A. V. Sidorin, È. S. Gulyamova, V. V. Tumorin, P. P. Pashinin, “Study of the luminescence power of excitons and impurity–defect centers excited via two-photon absorption”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 48–54; Semiconductors, 54:1 (2020), 67–72
Linking options:
https://www.mathnet.ru/eng/phts5302 https://www.mathnet.ru/eng/phts/v54/i1/p48
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