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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 1, Pages 48–54
DOI: https://doi.org/10.21883/FTP.2020.01.48770.9143
(Mi phts5302)
 

This article is cited in 2 scientific papers (total in 2 papers)

Spectroscopy, interaction with radiation

Study of the luminescence power of excitons and impurity–defect centers excited via two-photon absorption

A. A. Gladilin, V. P. Danilov, N. N. Il'ichev, V. P. Kalinushkin, M. I. Studenikin, O. V. Uvarov, V. A. Chapnin, A. V. Ryabova, A. V. Sidorin, È. S. Gulyamova, V. V. Tumorin, P. P. Pashinin

Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
Full-text PDF (254 kB) Citations (2)
Abstract: The effect of the average power of femtosecond laser radiation on the average luminescence power of excitons and impurity–defect centers on the two-photon excitation of the electron system of a crystal is studied experimentally and theoretically using ZnSe : Fe$^{2+}$ single crystals as an example. It is experimentally shown that, in the region of excitation powers under consideration, the average luminescence power of excitons in the crystal is proportional to the 4th power of the average excitation-radiation power. The average luminescence power of impurity–defect centers is of quadratic character. A theory is developed to interpret the experimentally observed dependences. It is noted that the dependence of the luminescence power of a crystal on the pump power upon two-photon excitation can be used to estimate the degree of contamination of the crystal with impurity–defect centers.
Keywords: semiconductors, two-photon excitation of luminescence.
Funding agency Grant number
Russian Academy of Sciences - Federal Agency for Scientific Organizations 5
Russian Foundation for Basic Research 19-02-00294
18-29-20048
The study was supported by the Presidium of the Russian Academy of Sciences, program no. 5 “Photonic Technologies in Probing Inhomogeneous Media and Biological Systems”, and in part by the Russian Foundation for Basic Research, project nos. 19-02-00294 and 18-29-20048.
Received: 18.04.2019
Revised: 03.09.2019
Accepted: 04.09.2019
English version:
Semiconductors, 2020, Volume 54, Issue 1, Pages 67–72
DOI: https://doi.org/10.1134/S1063782620010091
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. A. Gladilin, V. P. Danilov, N. N. Il'ichev, V. P. Kalinushkin, M. I. Studenikin, O. V. Uvarov, V. A. Chapnin, A. V. Ryabova, A. V. Sidorin, È. S. Gulyamova, V. V. Tumorin, P. P. Pashinin, “Study of the luminescence power of excitons and impurity–defect centers excited via two-photon absorption”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 48–54; Semiconductors, 54:1 (2020), 67–72
Citation in format AMSBIB
\Bibitem{GlaDanIli20}
\by A.~A.~Gladilin, V.~P.~Danilov, N.~N.~Il'ichev, V.~P.~Kalinushkin, M.~I.~Studenikin, O.~V.~Uvarov, V.~A.~Chapnin, A.~V.~Ryabova, A.~V.~Sidorin, \`E.~S.~Gulyamova, V.~V.~Tumorin, P.~P.~Pashinin
\paper Study of the luminescence power of excitons and impurity–defect centers excited via two-photon absorption
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 1
\pages 48--54
\mathnet{http://mi.mathnet.ru/phts5302}
\crossref{https://doi.org/10.21883/FTP.2020.01.48770.9143}
\elib{https://elibrary.ru/item.asp?id=42571066}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 1
\pages 67--72
\crossref{https://doi.org/10.1134/S1063782620010091}
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  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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