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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 1, Page 44 (Mi phts5298)  

This article is cited in 17 scientific papers (total in 17 papers)

Electronic properties of semiconductors

Band gap opening of doped graphene stone wales defects: simulation study

Jamal A. Talla

Department of Physics, Al al-Bayt University, Al-Mafraq, Jordan
Full-text PDF (24 kB) Citations (17)
Abstract: We implemented density functional theory to investigate the electronic properties of doped graphene Stone Wales defects. We found that the band gap of nitrogen doped graphene with different orientations of Stone Wales defect could be tuned. The obtained band gap results strongly depend not only on the specific location of the doped atom, but also on the orientations of Stone Wales defects. The symmetrical density of states is an indication that the total magnetic moment was zero as the valence electrons grouped in pairs. In addition, we performed charge analysis for all nitrogen doped graphene Stone Wales defects structures and it can be observed that the carbon atoms are more electronegative compared to nitrogen atoms, which obtain all the valence electrons. The transferred charge from nitrogen atom is largely localized on the carbon atoms lying in close proximity of the dopant atom.
Received: 10.07.2019
Revised: 06.08.2019
Accepted: 12.08.2019
English version:
Semiconductors, 2020, Volume 54, Issue 1, Pages 40–45
DOI: https://doi.org/10.1134/S1063782620010236
Bibliographic databases:
Document Type: Article
Language: English
Citation: Jamal A. Talla, “Band gap opening of doped graphene stone wales defects: simulation study”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 44; Semiconductors, 54:1 (2020), 40–45
Citation in format AMSBIB
\Bibitem{Tal20}
\by Jamal~A.~Talla
\paper Band gap opening of doped graphene stone wales defects: simulation study
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 1
\pages 44
\mathnet{http://mi.mathnet.ru/phts5298}
\elib{https://elibrary.ru/item.asp?id=42571062}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 1
\pages 40--45
\crossref{https://doi.org/10.1134/S1063782620010236}
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  • This publication is cited in the following 17 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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