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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 1, Page 44
(Mi phts5298)
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This article is cited in 17 scientific papers (total in 17 papers)
Electronic properties of semiconductors
Band gap opening of doped graphene stone wales defects: simulation study
Jamal A. Talla Department of Physics, Al al-Bayt University, Al-Mafraq, Jordan
Abstract:
We implemented density functional theory to investigate the electronic properties of doped graphene Stone Wales defects. We found that the band gap of nitrogen doped graphene with different orientations of Stone Wales defect could be tuned. The obtained band gap results strongly depend not only on the specific location of the doped atom, but also on the orientations of Stone Wales defects. The symmetrical density of states is an indication that the total magnetic moment was zero as the valence electrons grouped in pairs. In addition, we performed charge analysis for all nitrogen doped graphene Stone Wales defects structures and it can be observed that the carbon atoms are more electronegative compared to nitrogen atoms, which obtain all the valence electrons. The transferred charge from nitrogen atom is largely localized on the carbon atoms lying in close proximity of the dopant atom.
Received: 10.07.2019 Revised: 06.08.2019 Accepted: 12.08.2019
Citation:
Jamal A. Talla, “Band gap opening of doped graphene stone wales defects: simulation study”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 44; Semiconductors, 54:1 (2020), 40–45
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https://www.mathnet.ru/eng/phts5298 https://www.mathnet.ru/eng/phts/v54/i1/p44
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