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This article is cited in 2 scientific papers (total in 2 papers)
Electronic properties of semiconductors
High-frequency conductivity of disordered semiconductors in the region of the transition from the linear to quadratic frequency dependence
M. A. Ormont, I. P. Zvyagin Faculty of Physics, Lomonosov Moscow State University
Abstract:
Features of the high-frequency conductivity of disordered semiconductors related to hopping electron transport over the impurity band are discussed. The frequency dependence of the real part of the low-temperature phononless conductivity in the region of the transition (crossover) from the linear to quadratic frequency dependence of the conductivity is calculated in the pair approximation. It is shown that the crossover in the terahertz-frequency range is related to the transition of the conductivity from the variable-range to fixed-range hopping regime with increasing frequency.
Keywords:
high-frequency hopping conductivity, universality of the frequency dependence of the conductivity, disordered semiconductors.
Received: 18.03.2019 Revised: 02.09.2019 Accepted: 05.09.2019
Citation:
M. A. Ormont, I. P. Zvyagin, “High-frequency conductivity of disordered semiconductors in the region of the transition from the linear to quadratic frequency dependence”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 36–43; Semiconductors, 54:1 (2020), 33–39
Linking options:
https://www.mathnet.ru/eng/phts5297 https://www.mathnet.ru/eng/phts/v54/i1/p36
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