Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 1, Pages 36–43
DOI: https://doi.org/10.21883/FTP.2020.01.48766.9106
(Mi phts5297)
 

This article is cited in 2 scientific papers (total in 2 papers)

Electronic properties of semiconductors

High-frequency conductivity of disordered semiconductors in the region of the transition from the linear to quadratic frequency dependence

M. A. Ormont, I. P. Zvyagin

Faculty of Physics, Lomonosov Moscow State University
Full-text PDF (176 kB) Citations (2)
Abstract: Features of the high-frequency conductivity of disordered semiconductors related to hopping electron transport over the impurity band are discussed. The frequency dependence of the real part of the low-temperature phononless conductivity in the region of the transition (crossover) from the linear to quadratic frequency dependence of the conductivity is calculated in the pair approximation. It is shown that the crossover in the terahertz-frequency range is related to the transition of the conductivity from the variable-range to fixed-range hopping regime with increasing frequency.
Keywords: high-frequency hopping conductivity, universality of the frequency dependence of the conductivity, disordered semiconductors.
Received: 18.03.2019
Revised: 02.09.2019
Accepted: 05.09.2019
English version:
Semiconductors, 2020, Volume 54, Issue 1, Pages 33–39
DOI: https://doi.org/10.1134/S1063782620010194
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. A. Ormont, I. P. Zvyagin, “High-frequency conductivity of disordered semiconductors in the region of the transition from the linear to quadratic frequency dependence”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 36–43; Semiconductors, 54:1 (2020), 33–39
Citation in format AMSBIB
\Bibitem{OrmZvy20}
\by M.~A.~Ormont, I.~P.~Zvyagin
\paper High-frequency conductivity of disordered semiconductors in the region of the transition from the linear to quadratic frequency dependence
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 1
\pages 36--43
\mathnet{http://mi.mathnet.ru/phts5297}
\crossref{https://doi.org/10.21883/FTP.2020.01.48766.9106}
\elib{https://elibrary.ru/item.asp?id=42571061}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 1
\pages 33--39
\crossref{https://doi.org/10.1134/S1063782620010194}
Linking options:
  • https://www.mathnet.ru/eng/phts5297
  • https://www.mathnet.ru/eng/phts/v54/i1/p36
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024