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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 1, Pages 31–35
DOI: https://doi.org/10.21883/FTP.2020.01.48765.9069
(Mi phts5296)
 

This article is cited in 2 scientific papers (total in 2 papers)

Electronic properties of semiconductors

On the growth and properties of FeIn$_{2}$S$_{3.6}$Se$_{0.4}$ single crystals

I. V. Bondar'

Belarussian State University of Computer Science and Radioelectronic Engineering, Minsk, Belarus
Full-text PDF (154 kB) Citations (2)
Abstract: FeIn$_{2}$S$_{3.6}$Se$_{0.4}$ single crystals are grown by planar crystallization of the melt (the vertical Bridgman method). The composition and crystal structure of the crystals are determined. It is established that the single crystals crystallize with the formation of the cubic spinel structure. From the transmittance spectra in the region of the fundamental absorption edge, the band gap of the single crystals is determined. Thermal expansion of the FeIn$_{2}$S$_{3.6}$Se$_{0.4}$ single crystals is studied by the dilatometric technique in the temperature range from 80 to 550 K, and the coefficients of thermal expansion are determined. From the coefficients of thermal expansion determined, the Debye temperatures and the root-mean-square (rms) dynamic displacements of atoms are calculated. It is shown that, as temperature is elevated, the Debye temperatures decrease and the rms dynamic displacements of atoms increase. Magnetic studies show that the FeIn$_{2}$S$_{3.6}$Se$_{0.4}$ single crystals are paramagnetic materials at temperatures down to 12.4 K.
Keywords: FeIn$_{2}$S$_{3.6}$Se$_{0.4}$ single crystals, vertical Bridgman method, thermal expansion, optical spectra, paramagnetism.
Received: 22.01.2019
Revised: 29.08.2019
Accepted: 02.09.2019
English version:
Semiconductors, 2020, Volume 54, Issue 1, Pages 28–32
DOI: https://doi.org/10.1134/S1063782620010054
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. V. Bondar', “On the growth and properties of FeIn$_{2}$S$_{3.6}$Se$_{0.4}$ single crystals”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 31–35; Semiconductors, 54:1 (2020), 28–32
Citation in format AMSBIB
\Bibitem{Bon20}
\by I.~V.~Bondar'
\paper On the growth and properties of FeIn$_{2}$S$_{3.6}$Se$_{0.4}$ single crystals
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 1
\pages 31--35
\mathnet{http://mi.mathnet.ru/phts5296}
\crossref{https://doi.org/10.21883/FTP.2020.01.48765.9069}
\elib{https://elibrary.ru/item.asp?id=42571060}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 1
\pages 28--32
\crossref{https://doi.org/10.1134/S1063782620010054}
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  • https://www.mathnet.ru/eng/phts/v54/i1/p31
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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