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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 1, Pages 18–21
DOI: https://doi.org/10.21883/FTP.2020.01.48762.9119 (Mi phts5293) 		 
Electronic properties of semiconductors

Parameters of ZnO semiconductor films doped with Mn and Fe 3$d$ impurities

M. M. Mezdroginaa, A. Ya. Vinogradova, Yu. V. Kozhanovab

a Ioffe Institute, St. Petersburg
b Peter the Great St. Petersburg Polytechnic University
Full-text PDF (148 kB)
DOI: https://doi.org/10.21883/FTP.2020.01.48762.9119
Abstract: The effect of Fe and Mn impurities on the magnetic parameters of ZnO wide-gap semiconductor films produced by high-frequency sputtering with wide variations in the defect concentration is studied. The introduction of Mn and Fe magnetic impurities brings about the existence of a magnetically ordered state in the semiconductor matrix, with different positions of the axis of easy magnetization. In the case of doping with Mn, this axis lies perpendicularly to the film plane, and in the case of doping with Fe, this axis lies in the film plane.
Keywords: wide-gap semiconductor, ZnO films, Fe and Mn 3$d$-metal impurities.
Received: 28.03.2019
Revised: 29.04.2019
Accepted: 29.04.2019
English version:
Semiconductors, 2020, Volume 54, Issue 1, Pages 15–18
DOI: https://doi.org/10.1134/S1063782620010145
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. M. Mezdrogina, A. Ya. Vinogradov, Yu. V. Kozhanova, “Parameters of ZnO semiconductor films doped with Mn and Fe 3$d$ impurities”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 18–21; Semiconductors, 54:1 (2020), 15–18
Citation in format AMSBIB
\Bibitem{MezVinKoz20}
\by M.~M.~Mezdrogina, A.~Ya.~Vinogradov, Yu.~V.~Kozhanova
\paper Parameters of ZnO semiconductor films doped with Mn and Fe 3$d$ impurities
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 1
\pages 18--21
\mathnet{http://mi.mathnet.ru/phts5293}
\crossref{https://doi.org/10.21883/FTP.2020.01.48762.9119}
\elib{https://elibrary.ru/item.asp?id=42571057}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 1
\pages 15--18
\crossref{https://doi.org/10.1134/S1063782620010145}
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