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This article is cited in 1 scientific paper (total in 1 paper)
Electronic properties of semiconductors
Revisiting the nature of the anomalous temperature dependence of the Hall coefficient observed for semiconductor crystals of Bi$_{2}$Te$_3$–Sb$_{2}$Te$_{3}$ solid solutions
N. P. Stepanov Zabaikalsky State University, Chita
Abstract:
It is shown based on analysis of the results of experimental investigations that a certain process that provides an increase in the electrical conductivity in the range from 4.2 to 15 K intensifies for some Bi$_{2}$Te$_3$–Sb$_{2}$Te$_{3}$ crystals, for which the electrical conductivity exceeds 1.5 $\times$ 106 S/m. The subsequent decrease in the electrical conductivity with an increase in temperature from 15 K and up to the beginning of domination of the intrinsic conductivity, which is accompanied by an anomalous increase in the Hall coefficient, can be partially caused by a decrease in this process intensity. The assumption is formulated that the influence of plasmon–phonon–polaritons under the conditions of approaching the plasmon energy and band-gap width is able to provide the inverse polarization effect, which is the basis of this process.
Keywords:
semiconductors, electrical conductivity, Hall coefficient, free carrier plasma, plasmon–phonon–polaritons, band-gap width.
Received: 12.04.2018 Revised: 05.09.2019 Accepted: 09.09.2019
Citation:
N. P. Stepanov, “Revisiting the nature of the anomalous temperature dependence of the Hall coefficient observed for semiconductor crystals of Bi$_{2}$Te$_3$–Sb$_{2}$Te$_{3}$ solid solutions”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 13–17; Semiconductors, 54:1 (2020), 11–14
Linking options:
https://www.mathnet.ru/eng/phts5292 https://www.mathnet.ru/eng/phts/v54/i1/p13
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