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This article is cited in 3 scientific papers (total in 3 papers)
Semiconductor physics
Model of the negative-bias temperature instability of $p$-MOS transistors
O. V. Aleksandrov Saint Petersburg Electrotechnical University "LETI"
Abstract:
A new quantitative model of the negative-bias temperature instability (NBTI) of $p$-MOS (metal-oxide-semiconductor) transistors is developed. The model is based on the reaction of the depassivation of surface states at the Si–SiO$_2$ interphase boundary (IPB) and hydrogen-containing hole traps near the Si–SiO$_2$ IPB by positively charged hydrogen ions H$^+$, accumulated in the $p^+$-type inversion layer of the silicon substrate. The dependences of the surface and space charges in $p$-MOS transistors on the NBTI time are controlled by the kinetics of H$^+$-ion diffusion and drift from the silicon substrate to the Si–SiO$_2$ IPB. The effect of the gate voltage on the NBTI is explained by the effect of the electric-field strength on the H$^+$ ion segregation coefficient at the Si–SiO$_2$ IPB. The relaxation of positive space charge introduced into the gate dielectric during NBTI is described by the tunnel discharge of oxide traps by silicon-substrate electrons.
Keywords:
MOS transistor, thermal-field instability, surface states, oxide traps, simulation.
Received: 21.03.2019 Revised: 04.09.2019 Accepted: 16.09.2019
Citation:
O. V. Aleksandrov, “Model of the negative-bias temperature instability of $p$-MOS transistors”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 181–188; Semiconductors, 54:2 (2020), 233–239
Linking options:
https://www.mathnet.ru/eng/phts5284 https://www.mathnet.ru/eng/phts/v54/i2/p181
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