|
This article is cited in 2 scientific papers (total in 2 papers)
Micro- and nanocrystalline, porous, composite semiconductors
Influence of temperature on the planar GaAs nanowire morphology (simulation)
A. A. Spirinaa, N. L. Shwartzab a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State Technical University
Abstract:
Using a kinetic lattice Monte Carlo model, the self-catalyzed growth of planar GaAs nanowires was analyzed. The nanowire growth via the vapor-liquid-crystal mechanism was considered. The effect of temperature and the catalyst droplet location on the morphology and growth direction of planar GaAs nanowires was studied. For GaAs(111)A and GaAs(111)B substrates, a temperature range corresponding to stable growth of planar GaAs nanowires was revealed. The special asymmetric arrangement of droplets allows the one-directional nanowire growth.
Keywords:
GaAs, planar nanowire, simulation, Monte Carlo.
Received: 26.09.2019 Revised: 30.09.2019 Accepted: 30.09.2019
Citation:
A. A. Spirina, N. L. Shwartz, “Influence of temperature on the planar GaAs nanowire morphology (simulation)”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 160–164; Semiconductors, 54:2 (2020), 212–216
Linking options:
https://www.mathnet.ru/eng/phts5280 https://www.mathnet.ru/eng/phts/v54/i2/p160
|
Statistics & downloads: |
Abstract page: | 49 | Full-text PDF : | 13 |
|