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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 2, Pages 160–164
DOI: https://doi.org/10.21883/FTP.2020.02.48911.9270 (Mi phts5280) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Micro- and nanocrystalline, porous, composite semiconductors

Influence of temperature on the planar GaAs nanowire morphology (simulation)

A. A. Spirinaa, N. L. Shwartzab

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State Technical University
Full-text PDF (1182 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2020.02.48911.9270
Abstract: Using a kinetic lattice Monte Carlo model, the self-catalyzed growth of planar GaAs nanowires was analyzed. The nanowire growth via the vapor-liquid-crystal mechanism was considered. The effect of temperature and the catalyst droplet location on the morphology and growth direction of planar GaAs nanowires was studied. For GaAs(111)A and GaAs(111)B substrates, a temperature range corresponding to stable growth of planar GaAs nanowires was revealed. The special asymmetric arrangement of droplets allows the one-directional nanowire growth.
Keywords: GaAs, planar nanowire, simulation, Monte Carlo.
Funding agency Grant number
Russian Foundation for Basic Research 19-31-90023
This study was supported by the Russian Science Foundation, project no. 19-31-90023.
Received: 26.09.2019
Revised: 30.09.2019
Accepted: 30.09.2019
English version:
Semiconductors, 2020, Volume 54, Issue 2, Pages 212–216
DOI: https://doi.org/10.1134/S1063782620020190
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. A. Spirina, N. L. Shwartz, “Influence of temperature on the planar GaAs nanowire morphology (simulation)”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 160–164; Semiconductors, 54:2 (2020), 212–216
Citation in format AMSBIB
\Bibitem{SpiShw20}
\by A.~A.~Spirina, N.~L.~Shwartz
\paper Influence of temperature on the planar GaAs nanowire morphology (simulation)
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 2
\pages 160--164
\mathnet{http://mi.mathnet.ru/phts5280}
\crossref{https://doi.org/10.21883/FTP.2020.02.48911.9270}
\elib{https://elibrary.ru/item.asp?id=42571092}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 2
\pages 212--216
\crossref{https://doi.org/10.1134/S1063782620020190}
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  • https://www.mathnet.ru/eng/phts/v54/i2/p160
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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