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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 2, Pages 149–152
DOI: https://doi.org/10.21883/FTP.2020.02.48895.9287 (Mi phts5278) 		 
Amorphous, glassy, organic semiconductors

Structural and dielectric study of thin amorphous layers of the Ge–Sb–Te system prepared by RF magnetron sputtering

R. A. Castro-Arataa, V. M. Stozharova, D. M. Dolginseva, A. A. Kononova, Yu. Saitob, P. Fonsb, J. Tominagab, N. I. Anisimovaa, A. V. Kolobova

a Herzen State Pedagogical University of Russia, St. Petersburg
b National Institute of Advanced Industrial Science and Technology, Tsukuba Central 5, 1-1-1 Higashi, 305-8565, Tsukuba, Japan
Full-text PDF (181 kB)
DOI: https://doi.org/10.21883/FTP.2020.02.48895.9287
Abstract: The results of studying the structure and processes of dielectric relaxation in thin layers of Ge–Sb–Te are presented. The found permittivity dispersion and occurrence of dielectric-loss maxima in the low-frequency region are explained by the structural features of the compounds under study.
Keywords: structural and dielectric properties, Ge–Sb–Te chalcogenide system.
Received: 15.10.2019
Revised: 23.10.2019
Accepted: 23.10.2019
English version:
Semiconductors, 2020, Volume 54, Issue 2, Pages 201–204
DOI: https://doi.org/10.1134/S106378262002013X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. A. Castro-Arata, V. M. Stozharov, D. M. Dolginsev, A. A. Kononov, Yu. Saito, P. Fons, J. Tominaga, N. I. Anisimova, A. V. Kolobov, “Structural and dielectric study of thin amorphous layers of the Ge–Sb–Te system prepared by RF magnetron sputtering”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 149–152; Semiconductors, 54:2 (2020), 201–204
Citation in format AMSBIB
\Bibitem{KasStoDol20}
\by R.~A.~Castro-Arata, V.~M.~Stozharov, D.~M.~Dolginsev, A.~A.~Kononov, Yu.~Saito, P.~Fons, J.~Tominaga, N.~I.~Anisimova, A.~V.~Kolobov
\paper Structural and dielectric study of thin amorphous layers of the Ge--Sb--Te system prepared by RF magnetron sputtering
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 2
\pages 149--152
\mathnet{http://mi.mathnet.ru/phts5278}
\crossref{https://doi.org/10.21883/FTP.2020.02.48895.9287}
\elib{https://elibrary.ru/item.asp?id=42571090}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 2
\pages 201--204
\crossref{https://doi.org/10.1134/S106378262002013X}
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