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This article is cited in 6 scientific papers (total in 6 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Molecular states of composite fermions in self-organized InP/GaInP quantum dots in zero magnetic field
A. M. Mintairovab a Ioffe Institute, St. Petersburg
b Electrical Engineering Department, University of Notre Dame,
Notre Dame, Indiana 46556, USA
Abstract:
The size and positions of regions of line localization and the magnetic-field (0–10 T) dependence of the low-temperature (10 K) photoluminescence spectra of single InP/GaInP quantum dots with a number of electrons of $N$ = 5–7 and a Wigner–Seitz radius of $\sim$2.5 are determined using a near-field scanning optical microscope. The formation of composite fermion molecules with a size coinciding with that of localization regions and bond lengths of $\sim$30 and 50 nm, respectively, at a Landau-level filling factor from 1/2 to 2/7 in zero magnetic field is established. At $N$ = 6, the pairing and rearrangement of composite fermions under photoexcitation are found, which offers opportunities for the use of InP/GaInP quantum dots to create a magnetic-field-free topological quantum gate.
Keywords:
InP/GaInP quantum dots, composite fermions, photoluminescence, near-field scanning microscopy, topological quantum gate.
Received: 26.09.2019 Revised: 30.09.2019 Accepted: 30.09.2019
Citation:
A. M. Mintairov, “Molecular states of composite fermions in self-organized InP/GaInP quantum dots in zero magnetic field”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 138–143; Semiconductors, 54:2 (2020), 190–195
Linking options:
https://www.mathnet.ru/eng/phts5276 https://www.mathnet.ru/eng/phts/v54/i2/p138
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