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This article is cited in 1 scientific paper (total in 1 paper)
Electronic properties of semiconductors
Negative differential conductivity of lanthanum-oxide-based structures
A. Igityanab, N. Aghamalyanab, R. Ovsepyanab, S. Petrosyanab, G. Badalyana, I. Gambaryana, A. Papikyanb, Y. Kafadaryanab a Institute for Physical Research NAS of Armenia
b Russian-Armenian University, Yerevan
Abstract:
Transparent surface-hydrogenated lanthanum-oxide films (La$_{2}$O$_{3}$) 40, 140, and 545 nm in thickness are fabricated using electron-beam evaporation. The electrical and optical characteristics of Al/OH–La$_2$O$_3$/$p$-Si structures are investigated. Aluminum and silicon substrates of $p$-type conductivity are used as the upper and lower electrodes of the structure, respectively. The region of negative differential conductivity is found in the voltage dependences of conductivity under forward bias; the possible mechanism of the negative differential conductivity is explained by proton transfer along chains of water molecules bound by hydrogen bonds on the surface of the
OH–La$_{2}$O$_{3}$ film.
Keywords:
negative differential conductivity, OH–La$_{2}$O$_{3}$, proton conductivity.
Received: 07.10.2019 Revised: 15.10.2019 Accepted: 15.10.2019
Citation:
A. Igityan, N. Aghamalyan, R. Ovsepyan, S. Petrosyan, G. Badalyan, I. Gambaryan, A. Papikyan, Y. Kafadaryan, “Negative differential conductivity of lanthanum-oxide-based structures”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 117–122; Semiconductors, 54:2 (2020), 163–168
Linking options:
https://www.mathnet.ru/eng/phts5272 https://www.mathnet.ru/eng/phts/v54/i2/p117
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