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This article is cited in 4 scientific papers (total in 4 papers)
Semiconductor physics
Development and study of the $p$–$i$–$n$-диодов GaAs/AlGaAs tunnel diodes for multijunction converters of high-power laser radiation
V. S. Kalinovskii, E. V. Kontrosh, G. V. Klimko, S. V. Ivanov, V. S. Yuferev, B. Ya. Ber, D. Yu. Kazantsev, V. M. Andreev Ioffe Institute, St. Petersburg
Abstract:
The creation of connecting tunnel diodes with a peak tunneling-current density higher than the density of the short-circuit current of photoactive $p$–$n$ junctions is an important task in the development of multijunction photoconverters (III–V) of high-power optical radiation. Basing on numerical simulation of the J–U characteristics of tunnel diodes, a method is proposed for increasing the peak tunneling-current density by including a thin undoped $i$-type layer with a thickness of several nanometers between degenerate layers of the tunnel diode. The $p$–$i$–$n$-GaAs/Al$_{0.2}$Ga$_{0.8}$As structures of the connecting tunnel diodes with a peak tunneling-current density of up to 200 A/cm$^2$ are grown by molecular-beam epitaxy.
Keywords:
tunnel diode, quantum tunneling, current-voltage characteristic, multi-junction photoconverter, molecular beam epitaxy.
Received: 29.10.2019 Revised: 05.11.2019 Accepted: 05.11.2019
Citation:
V. S. Kalinovskii, E. V. Kontrosh, G. V. Klimko, S. V. Ivanov, V. S. Yuferev, B. Ya. Ber, D. Yu. Kazantsev, V. M. Andreev, “Development and study of the $p$–$i$–$n$-диодов GaAs/AlGaAs tunnel diodes for multijunction converters of high-power laser radiation”, Fizika i Tekhnika Poluprovodnikov, 54:3 (2020), 285–291; Semiconductors, 54:3 (2020), 355–361
Linking options:
https://www.mathnet.ru/eng/phts5266 https://www.mathnet.ru/eng/phts/v54/i3/p285
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