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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 3, Pages 246–250
DOI: https://doi.org/10.21883/FTP.2020.03.49028.9224 (Mi phts5260) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Micro- and nanocrystalline, porous, composite semiconductors

Ohmic contacts to gallium nitride-based structures

A. V. Zhelannova, A. S. Ionova, B. I. Seleznevb, D. G. Fedorova

a JSC OKB-Planeta, Velikii Novgorod
b Yaroslav-the-Wise Novgorod State University
Full-text PDF (145 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2020.03.49028.9224
Abstract: Studies of the characteristics of ohmic contacts to epitaxial and ion-doped gallium-nitride layers, based on the Cr/Pt/Au metallization system, are reported. The possibility of forming low-resistance contacts without the application of high-temperature treatment is shown. It is demonstrated, for AlGaN/GaN-based heterostructures, that the characteristics of Ti/Al/Ni/Au ohmic contacts are improved upon using ion implantation through a silicon-dioxide mask.
Keywords: Heterostructure, gallium nitride, ohmic contact, metallization system, ion implantation, fast thermal annealing, specific contact resistance.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 3.3572.2017/ПЧ
The work was prepared with financial support from the Ministry of Education and Science of Russia under the projective part of the State assignment, project no. 3.3572.2017/PCh.
Received: 23.07.2019
Revised: 03.09.2019
Accepted: 05.11.2019
English version:
Semiconductors, 2020, Volume 54, Issue 3, Pages 317–321
DOI: https://doi.org/10.1134/S1063782620030197
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Zhelannov, A. S. Ionov, B. I. Seleznev, D. G. Fedorov, “Ohmic contacts to gallium nitride-based structures”, Fizika i Tekhnika Poluprovodnikov, 54:3 (2020), 246–250; Semiconductors, 54:3 (2020), 317–321
Citation in format AMSBIB
\Bibitem{ZheIonSel20}
\by A.~V.~Zhelannov, A.~S.~Ionov, B.~I.~Seleznev, D.~G.~Fedorov
\paper Ohmic contacts to gallium nitride-based structures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 3
\pages 246--250
\mathnet{http://mi.mathnet.ru/phts5260}
\crossref{https://doi.org/10.21883/FTP.2020.03.49028.9224}
\elib{https://elibrary.ru/item.asp?id=42776677}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 3
\pages 317--321
\crossref{https://doi.org/10.1134/S1063782620030197}
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  • https://www.mathnet.ru/eng/phts/v54/i3/p246
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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