Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 3, Pages 246–250
DOI: https://doi.org/10.21883/FTP.2020.03.49028.9224 (Mi phts5260) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Micro- and nanocrystalline, porous, composite semiconductors

Ohmic contacts to gallium nitride-based structures

A. V. Zhelannova, A. S. Ionova, B. I. Seleznevb, D. G. Fedorova

a JSC OKB-Planeta, Velikii Novgorod
b Yaroslav-the-Wise Novgorod State University
Full-text PDF (145 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2020.03.49028.9224
Abstract: Studies of the characteristics of ohmic contacts to epitaxial and ion-doped gallium-nitride layers, based on the Cr/Pt/Au metallization system, are reported. The possibility of forming low-resistance contacts without the application of high-temperature treatment is shown. It is demonstrated, for AlGaN/GaN-based heterostructures, that the characteristics of Ti/Al/Ni/Au ohmic contacts are improved upon using ion implantation through a silicon-dioxide mask.
Keywords: Heterostructure, gallium nitride, ohmic contact, metallization system, ion implantation, fast thermal annealing, specific contact resistance.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 3.3572.2017/ПЧ
The work was prepared with financial support from the Ministry of Education and Science of Russia under the projective part of the State assignment, project no. 3.3572.2017/PCh.
Received: 23.07.2019
Revised: 03.09.2019
Accepted: 05.11.2019
English version:
Semiconductors, 2020, Volume 54, Issue 3, Pages 317–321
DOI: https://doi.org/10.1134/S1063782620030197
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Zhelannov, A. S. Ionov, B. I. Seleznev, D. G. Fedorov, “Ohmic contacts to gallium nitride-based structures”, Fizika i Tekhnika Poluprovodnikov, 54:3 (2020), 246–250; Semiconductors, 54:3 (2020), 317–321
Citation in format AMSBIB
\Bibitem{ZheIonSel20}
\by A.~V.~Zhelannov, A.~S.~Ionov, B.~I.~Seleznev, D.~G.~Fedorov
\paper Ohmic contacts to gallium nitride-based structures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 3
\pages 246--250
\mathnet{http://mi.mathnet.ru/phts5260}
\crossref{https://doi.org/10.21883/FTP.2020.03.49028.9224}
\elib{https://elibrary.ru/item.asp?id=42776677}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 3
\pages 317--321
\crossref{https://doi.org/10.1134/S1063782620030197}
Linking options:
  • https://www.mathnet.ru/eng/phts5260
  • https://www.mathnet.ru/eng/phts/v54/i3/p246
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:60
    Full-text PDF :21
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024