Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 3, Pages 238–243
DOI: https://doi.org/10.21883/FTP.2020.03.49025.9249 (Mi phts5259) 		 
Semiconductor structures, low-dimensional systems, quantum phenomena

On the role of structural imperfections of graphene in resonant tunneling through localized states in the $h$-BN barrier of van-der-Waals heterostructures

M. V. Grigor'eva, D. A. Ghazaryanbc, E. E. Vdovina, Yu. N. Khanina, S. V. Morozova, K. S. Novoselovbd

a Institute of Microelectronics Technology and High-Purity Materials RAS
b School of Physics and Astronomy, The University of Manchester, Manchester, United Kingdom
c Department of Physics, National Research University Higher School of Economics, Moscow, Russia
d Department of Material Science and Engineering, National University of Singapore, Singapore, Republic of Singapore
Full-text PDF (498 kB)
DOI: https://doi.org/10.21883/FTP.2020.03.49025.9249
Abstract: Resonant tunneling through defect levels in the $h$-BN barrier of van-der-Waals heterostructures is investigated. The effect of multiplication of the tunneling resonances through these levels due to the effect of a high degree of imperfection of the structure of the neighboring graphene layer formed intentionally by its processing in plasma is found. Various mechanisms of such an effect are discussed.
Keywords: graphene, van-der-Waals heterostructures, crystal-lattice defects, boron nitride, tunneling transistor, resonant tunneling.
Funding agency Grant number
Russian Science Foundation 17-12-01393
Russian Academy of Sciences - Federal Agency for Scientific Organizations
E.E. Vdovin, Yu.N. Khanin, and S.V. Morozov thank the Russian Science Foundation for financial support (grant no. 17-12-01393), and M.V. Grigoryev expresses special gratitude to the Program of the Presidium of the Russian Academy of Sciences “Study of quantum effects in a condensed-state of matter at ultra-low temperatures”.
Received: 26.08.2019
Revised: 06.11.2019
Accepted: 07.11.2019
English version:
Semiconductors, 2020, Volume 54, Issue 3, Pages 291–296
DOI: https://doi.org/10.1134/S1063782620030082
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. V. Grigor'ev, D. A. Ghazaryan, E. E. Vdovin, Yu. N. Khanin, S. V. Morozov, K. S. Novoselov, “On the role of structural imperfections of graphene in resonant tunneling through localized states in the $h$-BN barrier of van-der-Waals heterostructures”, Fizika i Tekhnika Poluprovodnikov, 54:3 (2020), 238–243; Semiconductors, 54:3 (2020), 291–296
Citation in format AMSBIB
\Bibitem{GriGhaVdo20}
\by M.~V.~Grigor'ev, D.~A.~Ghazaryan, E.~E.~Vdovin, Yu.~N.~Khanin, S.~V.~Morozov, K.~S.~Novoselov
\paper On the role of structural imperfections of graphene in resonant tunneling through localized states in the $h$-BN barrier of van-der-Waals heterostructures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 3
\pages 238--243
\mathnet{http://mi.mathnet.ru/phts5259}
\crossref{https://doi.org/10.21883/FTP.2020.03.49025.9249}
\elib{https://elibrary.ru/item.asp?id=42776676}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 3
\pages 291--296
\crossref{https://doi.org/10.1134/S1063782620030082}
Linking options:
  • https://www.mathnet.ru/eng/phts5259
  • https://www.mathnet.ru/eng/phts/v54/i3/p238
    • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:61
    Full-text PDF :15
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024