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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 4, Pages 427–431
DOI: https://doi.org/10.21883/FTP.2020.04.49153.9312 (Mi phts5254) 		 
This article is cited in 3 scientific papers (total in 3 papers)

Manufacturing, processing, testing of materials and structures

Features of SiO$_2$ layers synthesized on silicon by molecular layer deposition

A. P. Barabana, E. A. Denisova, V. A. Dmitrieva, A. V. Drozda, V. E. Drozda, A. A. Selivanova, R. Seisyanb

a Saint Petersburg State University
b Ioffe Institute, St. Petersburg
Full-text PDF (217 kB) Citations (3)
DOI: https://doi.org/10.21883/FTP.2020.04.49153.9312
Abstract: The characteristics of silicon-oxide layers deposited by various technological methods are compared. It is shown that the catalytic method for obtaining silicon-oxide layers by molecular layering has a number of advantages. The main advantages are a low growth temperature, high-quality interface with a silicon substrate, and high growth rate of films. Studies by cathodoluminescence made it possible to evaluate the structural quality of silicon-oxide layers produced by molecular layering and confirmed the potential of this method in obtaining high-quality silicon-oxide films for broad practical application.
Keywords: molecular layering, low-temperature synthesis, silicon oxide, catalytic synthesis, cathodoluminescence, spectral distribution.
Received: 12.11.2019
Revised: 18.11.2019
Accepted: 18.11.2019
English version:
Semiconductors, 2020, Volume 54, Issue 4, Pages 506–510
DOI: https://doi.org/10.1134/S106378262004003X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. P. Baraban, E. A. Denisov, V. A. Dmitriev, A. V. Drozd, V. E. Drozd, A. A. Selivanov, R. Seisyan, “Features of SiO$_2$ layers synthesized on silicon by molecular layer deposition”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 427–431; Semiconductors, 54:4 (2020), 506–510
Citation in format AMSBIB
\Bibitem{BarDenDmi20}
\by A.~P.~Baraban, E.~A.~Denisov, V.~A.~Dmitriev, A.~V.~Drozd, V.~E.~Drozd, A.~A.~Selivanov, R.~Seisyan
\paper Features of SiO$_2$ layers synthesized on silicon by molecular layer deposition
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 4
\pages 427--431
\mathnet{http://mi.mathnet.ru/phts5254}
\crossref{https://doi.org/10.21883/FTP.2020.04.49153.9312}
\elib{https://elibrary.ru/item.asp?id=42776708}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 4
\pages 506--510
\crossref{https://doi.org/10.1134/S106378262004003X}
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  • https://www.mathnet.ru/eng/phts/v54/i4/p427
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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