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This article is cited in 3 scientific papers (total in 3 papers)
Manufacturing, processing, testing of materials and structures
Features of SiO$_2$ layers synthesized on silicon by molecular layer deposition
A. P. Barabana, E. A. Denisova, V. A. Dmitrieva, A. V. Drozda, V. E. Drozda, A. A. Selivanova, R. Seisyanb a Saint Petersburg State University
b Ioffe Institute, St. Petersburg
Abstract:
The characteristics of silicon-oxide layers deposited by various technological methods are compared. It is shown that the catalytic method for obtaining silicon-oxide layers by molecular layering has a number of advantages. The main advantages are a low growth temperature, high-quality interface with a silicon substrate, and high growth rate of films. Studies by cathodoluminescence made it possible to evaluate the structural quality of silicon-oxide layers produced by molecular layering and confirmed the potential of this method in obtaining high-quality silicon-oxide films for broad practical application.
Keywords:
molecular layering, low-temperature synthesis, silicon oxide, catalytic synthesis, cathodoluminescence, spectral distribution.
Received: 12.11.2019 Revised: 18.11.2019 Accepted: 18.11.2019
Citation:
A. P. Baraban, E. A. Denisov, V. A. Dmitriev, A. V. Drozd, V. E. Drozd, A. A. Selivanov, R. Seisyan, “Features of SiO$_2$ layers synthesized on silicon by molecular layer deposition”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 427–431; Semiconductors, 54:4 (2020), 506–510
Linking options:
https://www.mathnet.ru/eng/phts5254 https://www.mathnet.ru/eng/phts/v54/i4/p427
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