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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 4, Pages 327–330
DOI: https://doi.org/10.21883/FTP.2020.04.49135.9293
(Mi phts5238)
 

This article is cited in 1 scientific paper (total in 1 paper)

Electronic properties of semiconductors

Temperature-dependent total absorption of exciton polaritons in bulk semiconductors

R. Seisyan, S. A. Vaganov

Ioffe Institute, St. Petersburg
Abstract: This paper highlights the temperature factor in the experimental study of total absorption as a method for experimental validation and the study of the exciton–polariton light transfer mechanism near the fundamental absorption edge in semiconductor crystals with spatial dispersion. The results of experimental studies of temperature-dependent total exciton absorption are generalized. The experimentally determined critical temperatures above which total absorption becomes constant, the corresponding critical damping parameter, and longitudinal–transverse splittings for the studied semiconductors CdTe, GaAs, InP, ZnSe, and ZnTe are presented.
Keywords: exciton absorption, total absorption, temperature-dependent absorption, exciton polariton, semiconductor crystals.
Received: 22.10.2019
Revised: 28.11.2019
Accepted: 02.12.2019
English version:
Semiconductors, 2020, Volume 54, Issue 4, Pages 399–402
DOI: https://doi.org/10.1134/S1063782620040156
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. Seisyan, S. A. Vaganov, “Temperature-dependent total absorption of exciton polaritons in bulk semiconductors”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 327–330; Semiconductors, 54:4 (2020), 399–402
Citation in format AMSBIB
\Bibitem{SeiVag20}
\by R.~Seisyan, S.~A.~Vaganov
\paper Temperature-dependent total absorption of exciton polaritons in bulk semiconductors
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 4
\pages 327--330
\mathnet{http://mi.mathnet.ru/phts5238}
\crossref{https://doi.org/10.21883/FTP.2020.04.49135.9293}
\elib{https://elibrary.ru/item.asp?id=42776691}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 4
\pages 399--402
\crossref{https://doi.org/10.1134/S1063782620040156}
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  • https://www.mathnet.ru/eng/phts/v54/i4/p327
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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