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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 5, Pages 504–509
DOI: https://doi.org/10.21883/FTP.2020.05.49269.9340 (Mi phts5236) 		 
This article is cited in 5 scientific papers (total in 5 papers)

Manufacturing, processing, testing of materials and structures

Formation of multilayer structures with integrated membranes based on porous silicon

V. V. Bolotov, K. E. Ivlev, E. V. Knyazev, I. V. Ponomareva, V. E. Roslikov

Omsk Scientific Center, Siberian Branch of the Russian Academy of Sciences
Full-text PDF (923 kB) Citations (5)
DOI: https://doi.org/10.21883/FTP.2020.05.49269.9340
Abstract: Multilayer integrated porous membranes in a monolithic frame were obtained. Porous membranes consist of macroporous silicon with pore diameters of up to 10 $\mu$m and channel silicon with channel diameters from 100 to 300 nm. A laboratory technology is proposed to formation of macroporous/channel silicon two-layer structures using high-resistance $n$-Si substrates (1 $\Omega$ cm). The mechanism of pore formation is discussed and how this mechanism affects the morphology of porous layers when formic acid and ammonium hydroxide are used as electrolytes.
Keywords: porous silicon, electrochemical etching, electron microscopy, multilayer structures, membranes.
Funding agency Grant number
Program of FSR GAS for 2013--2020 АААА-А17-117041210227-8
The work was carried out according to the state task of the Omsk Scientific Center SB RAS (project registration number АААА-А17-117041210227-8). The work was performed using facilities of the Omsk Regional Shared Equipment Center SB RAS.
Received: 24.12.2019
Revised: 28.12.2019
Accepted: 30.12.2019
English version:
Semiconductors, 2020, Volume 54, Issue 5, Pages 609–613
DOI: https://doi.org/10.1134/S1063782620050024
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Bolotov, K. E. Ivlev, E. V. Knyazev, I. V. Ponomareva, V. E. Roslikov, “Formation of multilayer structures with integrated membranes based on porous silicon”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 504–509; Semiconductors, 54:5 (2020), 609–613
Citation in format AMSBIB
\Bibitem{BolIvlKny20}
\by V.~V.~Bolotov, K.~E.~Ivlev, E.~V.~Knyazev, I.~V.~Ponomareva, V.~E.~Roslikov
\paper Formation of multilayer structures with integrated membranes based on porous silicon
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 5
\pages 504--509
\mathnet{http://mi.mathnet.ru/phts5236}
\crossref{https://doi.org/10.21883/FTP.2020.05.49269.9340}
\elib{https://elibrary.ru/item.asp?id=42906066}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 5
\pages 609--613
\crossref{https://doi.org/10.1134/S1063782620050024}
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  • https://www.mathnet.ru/eng/phts/v54/i5/p504
    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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