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This article is cited in 1 scientific paper (total in 1 paper)
Semiconductor physics
Effect of uniaxial elastic deformation on the current–voltage characteristic of surface-barrier Sb–$p$-Si$\langle$Mn$\rangle$–Au diodes
O. O. Mamatkarimov, O. Khimmatkulov, I. G. Tursunov Namangan Engineering and Technology Institute, Namangan
Abstract:
The effect of uniaxial elastic deformation on the current–voltage characteristic of surface–barrier Sb–$p$-Si$\langle$Mn$\rangle$–Au diodes is studied. It is shown that reverse-current sensitivity to uniaxial compression exceeds the forward-current sensitivity at identical applied voltages. An increase in the forward current of these structures during deformation is caused by internal gain associated with redistribution of the applied voltage between the base and barrier.
Keywords:
silicon, surface-barrier diode, uniaxial deformation.
Received: 31.10.2019 Revised: 09.12.2019 Accepted: 11.12.2019
Citation:
O. O. Mamatkarimov, O. Khimmatkulov, I. G. Tursunov, “Effect of uniaxial elastic deformation on the current–voltage characteristic of surface-barrier Sb–$p$-Si$\langle$Mn$\rangle$–Au diodes”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 466–469; Semiconductors, 54:5 (2020), 563–566
Linking options:
https://www.mathnet.ru/eng/phts5231 https://www.mathnet.ru/eng/phts/v54/i5/p466
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