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Amorphous, glassy, organic semiconductors
Polarization processes in thin layers of amorphous MoS$_2$ obtained by RF magnetron sputtering
A. A. Kononova, R. A. Castro Arataa, D. D. Glavnayaa, V. M. Stozharova, D. M. Dolginseva, Yu. Saitob, P. Fonsb, N. I. Anisimovaa, A. V. Kolobovab a Herzen State Pedagogical University of Russia, St. Petersburg
b National Institute of Advanced Industrial Science and Technology, Tsukuba Central 5, 1-1-1 Higashi, 305-8565, Tsukuba, Ibaraki, Japan
Abstract:
The polarization processes in thin layers of amorphous molybdenum disulfide MoS$_2$ are studied by dielectric spectroscopy techniques. The process of dipole-relaxation polarization is observed. The microscopic parameters of the system are calculated, and the relaxation time of the dipole-polarization process, as well as the activation energies $E_a$ and $E_\sigma$ of the relaxation process and conductivity, respectively, are determined. The fact that the two activation energies are close to each other suggests that the processes of relaxation and charge transport are driven by the same mechanism.
Keywords:
molybdenum disulfide, transition-metal dichalcogenides, transport processes.
Received: 13.01.2020 Revised: 17.01.2020 Accepted: 17.01.2020
Citation:
A. A. Kononov, R. A. Castro Arata, D. D. Glavnaya, V. M. Stozharov, D. M. Dolginsev, Yu. Saito, P. Fons, N. I. Anisimova, A. V. Kolobov, “Polarization processes in thin layers of amorphous MoS$_2$ obtained by RF magnetron sputtering”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 461–465; Semiconductors, 54:5 (2020), 558–562
Linking options:
https://www.mathnet.ru/eng/phts5230 https://www.mathnet.ru/eng/phts/v54/i5/p461
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