Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 5, Pages 461–465
DOI: https://doi.org/10.21883/FTP.2020.05.49262.9345
(Mi phts5230)
 

Amorphous, glassy, organic semiconductors

Polarization processes in thin layers of amorphous MoS$_2$ obtained by RF magnetron sputtering

A. A. Kononova, R. A. Castro Arataa, D. D. Glavnayaa, V. M. Stozharova, D. M. Dolginseva, Yu. Saitob, P. Fonsb, N. I. Anisimovaa, A. V. Kolobovab

a Herzen State Pedagogical University of Russia, St. Petersburg
b National Institute of Advanced Industrial Science and Technology, Tsukuba Central 5, 1-1-1 Higashi, 305-8565, Tsukuba, Ibaraki, Japan
Abstract: The polarization processes in thin layers of amorphous molybdenum disulfide MoS$_2$ are studied by dielectric spectroscopy techniques. The process of dipole-relaxation polarization is observed. The microscopic parameters of the system are calculated, and the relaxation time of the dipole-polarization process, as well as the activation energies $E_a$ and $E_\sigma$ of the relaxation process and conductivity, respectively, are determined. The fact that the two activation energies are close to each other suggests that the processes of relaxation and charge transport are driven by the same mechanism.
Keywords: molybdenum disulfide, transition-metal dichalcogenides, transport processes.
Funding agency Grant number
Russian Foundation for Basic Research 19-07-00353 А
This study was supported by the Russian Foundation for Basic Research (project no. 19-07-00353A).
Received: 13.01.2020
Revised: 17.01.2020
Accepted: 17.01.2020
English version:
Semiconductors, 2020, Volume 54, Issue 5, Pages 558–562
DOI: https://doi.org/10.1134/S1063782620050073
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. A. Kononov, R. A. Castro Arata, D. D. Glavnaya, V. M. Stozharov, D. M. Dolginsev, Yu. Saito, P. Fons, N. I. Anisimova, A. V. Kolobov, “Polarization processes in thin layers of amorphous MoS$_2$ obtained by RF magnetron sputtering”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 461–465; Semiconductors, 54:5 (2020), 558–562
Citation in format AMSBIB
\Bibitem{KonCasGla20}
\by A.~A.~Kononov, R.~A.~Castro Arata, D.~D.~Glavnaya, V.~M.~Stozharov, D.~M.~Dolginsev, Yu.~Saito, P.~Fons, N.~I.~Anisimova, A.~V.~Kolobov
\paper Polarization processes in thin layers of amorphous MoS$_2$ obtained by RF magnetron sputtering
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 5
\pages 461--465
\mathnet{http://mi.mathnet.ru/phts5230}
\crossref{https://doi.org/10.21883/FTP.2020.05.49262.9345}
\elib{https://elibrary.ru/item.asp?id=42906058}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 5
\pages 558--562
\crossref{https://doi.org/10.1134/S1063782620050073}
Linking options:
  • https://www.mathnet.ru/eng/phts5230
  • https://www.mathnet.ru/eng/phts/v54/i5/p461
  • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:31
    Full-text PDF :12
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024