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This article is cited in 18 scientific papers (total in 18 papers)
Semiconductor physics
Solar-blind UV detectors based on $\beta$-Ga$_{2}$O$_{3}$ films
V. M. Kalygina, A. V. Almaev, V. А. Novikov, Yu. S. Petrova Tomsk State University
Abstract:
Resistive-type structures based on gallium oxide films were studied. Ga$_{2}$O$_{3}$ films were obtained by radio-frequency magnetron-assisted sputtering of a $\beta$-Ga$_{2}$O$_{3}$ (99.9999%) target onto unheated sapphire substrates with pre-deposited platinum electrodes. The structure and phase composition of the gallium-oxide films were determined. The current–voltage characteristics of the samples without and with exposure to radiation at the wavelengths $\lambda$ = 254 nm were measured. It was shown that after annealing, the photocurrent increases by an order. The absence of sensitivity of the studied structures to radiation in the visible wavelength range was experimentally confirmed.
Keywords:
gallium oxide films, annealing, dark current, photocurrent.
Received: 05.02.2020 Revised: 11.02.2020 Accepted: 11.02.2020
Citation:
V. M. Kalygina, A. V. Almaev, V. А. Novikov, Yu. S. Petrova, “Solar-blind UV detectors based on $\beta$-Ga$_{2}$O$_{3}$ films”, Fizika i Tekhnika Poluprovodnikov, 54:6 (2020), 575–579; Semiconductors, 54:6 (2020), 682–686
Linking options:
https://www.mathnet.ru/eng/phts5224 https://www.mathnet.ru/eng/phts/v54/i6/p575
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