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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 8, Pages 807–811
DOI: https://doi.org/10.21883/FTP.2020.08.49630.06 (Mi phts5200) 		 
XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

On the possibility of Ramsey interference in germanium doped with shallow impurities

V. V. Tsyplenkov, V. N. Shastin

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Full-text PDF (150 kB)
DOI: https://doi.org/10.21883/FTP.2020.08.49630.06
Abstract: Dynamics of creation and distraction of coherent states resonantly excited by pair of laser pulses following each other with temporal delay in germanium crystal doped with shallow impurities has been theoretically considered. The power of excited radiation, lattice tempera-ture and limit permissible of inhomogeneous line broadening that necessary to observe of Ramsey interference in such system have been estimated.
Keywords: germanium, shallow donors, laser excitation, coherent states, Ramsey interference.
Funding agency Grant number
Russian Science Foundation 19-72-20163
This study was supported by the Russian Science Foundation (project no. 19-72-20163).
Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020
English version:
Semiconductors, 2020, Volume 54, Issue 8, Pages 961–965
DOI: https://doi.org/10.1134/S1063782620080242
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Tsyplenkov, V. N. Shastin, “On the possibility of Ramsey interference in germanium doped with shallow impurities”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 807–811; Semiconductors, 54:8 (2020), 961–965
Citation in format AMSBIB
\Bibitem{TsySha20}
\by V.~V.~Tsyplenkov, V.~N.~Shastin
\paper On the possibility of Ramsey interference in germanium doped with shallow impurities
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 8
\pages 807--811
\mathnet{http://mi.mathnet.ru/phts5200}
\crossref{https://doi.org/10.21883/FTP.2020.08.49630.06}
\elib{https://elibrary.ru/item.asp?id=43800757}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 8
\pages 961--965
\crossref{https://doi.org/10.1134/S1063782620080242}
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