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This article is cited in 1 scientific paper (total in 1 paper)
Semiconductor physics
Investigation into radiation effects in a $p$-channel MOS transistor
A. V. Kuzminova, N. A. Kulikov, V. D. Popov National Engineering Physics Institute "MEPhI", Moscow
Abstract:
The effect of gamma radiation on the formation of surface defects at the Si–SiO$_{2}$ interface in a MOS transistor with a $p$-channel in the passive mode is considered. Several surface defect formation processes were observed. The role of molecular hydrogen in the gate oxide of the MOS transistor and "hot" electrons formed in the near-surface region of silicon is shown.
Keywords:
MOS-transistor, $p$-channel, $\gamma$-radiation, molecular hydrogen, “hot” electrons.
Received: 18.03.2020 Revised: 31.03.2020 Accepted: 31.03.2020
Citation:
A. V. Kuzminova, N. A. Kulikov, V. D. Popov, “Investigation into radiation effects in a $p$-channel MOS transistor”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 729–733; Semiconductors, 54:8 (2020), 877–881
Linking options:
https://www.mathnet.ru/eng/phts5188 https://www.mathnet.ru/eng/phts/v54/i8/p729
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