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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 8, Pages 721–728
DOI: https://doi.org/10.21883/FTP.2020.08.49642.9389
(Mi phts5187)
 

This article is cited in 1 scientific paper (total in 1 paper)

Semiconductor physics

On the current dependence of the injection efficiency and the relative contribution of the escape rate and internal optical loss to saturation of the power–current characteristics of high-power pulsed lasers ($\lambda$ = 1.06 $\mu$m)

A. V. Rozhkov

Ioffe Institute, St. Petersburg
Full-text PDF (177 kB) Citations (1)
Abstract: The results of numerical simulation of the current dependence of the efficiency of injection into the active area of a laser based on separate-confinement double heterostructures are reported. The feature of carrier transport through isotype $N$$n$ heterojunctions at the interface between the waveguide and active areas is demonstrated. Using the classic dependences of the Drude–Lorentz theory, the electron $(\sigma_e)$ and hole $(\sigma_p)$ scattering cross sections for a GaAs waveguide are estimated. Using the obtained values of $\sigma_e$ = 1.05 $\times$ 10$^{-18}$ cm$^2$ and $\sigma_p$ = 1.55 $\times$ 10$^{-19}$ cm$^2$ and the current dependences of the injection efficiency, the primary cause for confinement of the pulse power of the semiconductor lasers is determined. It is established that the internal optical loss is a minor fraction of the loss and the decisive contribution to saturation of the power–current ($P$$I$) characteristics is made by the escape of holes to the waveguide.
Keywords: thermoelectronic emission, semiconductor laser, isotype heterotransition, saturation of the $P$$I$ characteristic.
Received: 05.03.2020
Revised: 23.03.2020
Accepted: 23.03.2020
English version:
Semiconductors, 2020, Volume 54, Issue 8, Pages 869–876
DOI: https://doi.org/10.1134/S1063782620080217
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Rozhkov, “On the current dependence of the injection efficiency and the relative contribution of the escape rate and internal optical loss to saturation of the power–current characteristics of high-power pulsed lasers ($\lambda$ = 1.06 $\mu$m)”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 721–728; Semiconductors, 54:8 (2020), 869–876
Citation in format AMSBIB
\Bibitem{Roz20}
\by A.~V.~Rozhkov
\paper On the current dependence of the injection efficiency and the relative contribution of the escape rate and internal optical loss to saturation of the power–current characteristics of high-power pulsed lasers ($\lambda$ = 1.06 $\mu$m)
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 8
\pages 721--728
\mathnet{http://mi.mathnet.ru/phts5187}
\crossref{https://doi.org/10.21883/FTP.2020.08.49642.9389}
\elib{https://elibrary.ru/item.asp?id=43800744}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 8
\pages 869--876
\crossref{https://doi.org/10.1134/S1063782620080217}
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  • https://www.mathnet.ru/eng/phts/v54/i8/p721
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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