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This article is cited in 3 scientific papers (total in 3 papers)
Surface, interfaces, thin films
Nonresonance phase conjugation of light in optically pumped ZnO films
A. N. Gruzintsev Institute of Microelectronics Technology and High-Purity Materials RAS, Chernogolovka, Moscow region, Russia
Abstract:
The possibility of the nonresonance phase conjugation of light occurring in an excited semiconductor medium is shown theoretically and experimentally. In epitaxial ZnO films pumped with a nitrogen laser at room temperature, the induced phase conjugation of light in the visible and infrared spectral regions is detected. The dependences of the phase-conjugation signal intensity on the incident photon energy and laser-pumping intensity are studied. Interpretation of the effect as a result of the absorption and refraction of light at laser-induced free charge carriers in the semiconductor medium is proposed.
Keywords:
luminescence, phase conjugation.
Received: 06.04.2020 Revised: 12.04.2020 Accepted: 12.04.2020
Citation:
A. N. Gruzintsev, “Nonresonance phase conjugation of light in optically pumped ZnO films”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 700–705; Semiconductors, 54:8 (2020), 832–837
Linking options:
https://www.mathnet.ru/eng/phts5184 https://www.mathnet.ru/eng/phts/v54/i8/p700
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