Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 9, Pages 958–961
DOI: https://doi.org/10.21883/FTP.2020.09.49839.33 (Mi phts5178) 		 
XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Features of the vapor-phase epitaxy of GaAs on nonplanar substrates

Yu. N. Drozdov, S. A. Kraev, A. I. Okhapkin, V. M. Daniltsev, E. V. Skorokhodov

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Full-text PDF (1476 kB)
DOI: https://doi.org/10.21883/FTP.2020.09.49839.33
Abstract: The features of the surface shape of GaAs epitaxial layers grown on grooves several micrometers wide with vertical walls and an aspect ratio close to unity are investigated. The grooves are formed on the surface of a GaAs wafer in a plasma-chemical etching installation and overgrown by organometallic vapor-phase epitaxy under reduced pressure in a reactor.
Keywords: plasma-chemical etching of GaAs, narrow grooves, epitaxy of GaAs in grooves.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 0035-2019-0024-C-01
This work was performed as part of the state assignment no. 0035-2019-0024-C-01 for the Institute for Physics of Microstructures, Russian Academy of Sciences. Equipment of the collective use center “Physics and technology of microstructures and nanostructures” was used.
Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020
English version:
Semiconductors, 2020, Volume 54, Issue 9, Pages 1147–1149
DOI: https://doi.org/10.1134/S1063782620090080
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Yu. N. Drozdov, S. A. Kraev, A. I. Okhapkin, V. M. Daniltsev, E. V. Skorokhodov, “Features of the vapor-phase epitaxy of GaAs on nonplanar substrates”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 958–961; Semiconductors, 54:9 (2020), 1147–1149
Citation in format AMSBIB
\Bibitem{DroKraOkh20}
\by Yu.~N.~Drozdov, S.~A.~Kraev, A.~I.~Okhapkin, V.~M.~Daniltsev, E.~V.~Skorokhodov
\paper Features of the vapor-phase epitaxy of GaAs on nonplanar substrates
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 9
\pages 958--961
\mathnet{http://mi.mathnet.ru/phts5178}
\crossref{https://doi.org/10.21883/FTP.2020.09.49839.33}
\elib{https://elibrary.ru/item.asp?id=44154206}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 9
\pages 1147--1149
\crossref{https://doi.org/10.1134/S1063782620090080}
Linking options:
  • https://www.mathnet.ru/eng/phts5178
  • https://www.mathnet.ru/eng/phts/v54/i9/p958
    • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:47
    Full-text PDF :12
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024