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This article is cited in 2 scientific papers (total in 2 papers)
Micro- and nanocrystalline, porous, composite semiconductors
Structure and optical properties of chalcogenide glassy As–Ge–Te semiconductor
A. I. Isayev, H. I. Mammadova, S. I. Mekhtieva, R. I. Alekberov Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
Abstract:
The structure and optical properties of a chalcogenide glassy As–Ge–Te semiconductor film are studied by X-ray diffraction analysis, Raman spectroscopy, and optical transmission and density measurement. The main structural elements and chemical bonds forming an amorphous matrix as well as the optical width of the band gap are determined. The results are explained taking into account the main principles of chemical ordering and short-range order parameters in the atomic arrangement.
Keywords:
coordination numbers, cohesion energy, packing density, compactness.
Received: 01.06.2020 Revised: 08.06.2020 Accepted: 08.06.2020
Citation:
A. I. Isayev, H. I. Mammadova, S. I. Mekhtieva, R. I. Alekberov, “Structure and optical properties of chalcogenide glassy As–Ge–Te semiconductor”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1052–1057; Semiconductors, 54:10 (2020), 1241–1246
Linking options:
https://www.mathnet.ru/eng/phts5137 https://www.mathnet.ru/eng/phts/v54/i10/p1052
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