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This article is cited in 2 scientific papers (total in 2 papers)
Micro- and nanocrystalline, porous, composite semiconductors
Effect of ultraviolet radiation and electric field on the conductivity of structures based on $\alpha$- and $\varepsilon$-Ga$_{2}$O$_{3}$
V. M. Kalyginaa, V. I. Nikolaevbc, A. V. Almaeva, A. V. Tsymbalova, V. V. Kopyeva, Yu. S. Petrovaa, I. A. Pechnikovc, P. N. Butenkoc a Tomsk State University
b Perfect Crystals LLC, 194064, St. Petersburg, Russia
c Ioffe Institute, St. Petersburg
Abstract:
The influence of ultraviolet radiation and a strong electric field on the current-voltage characteristic of resistive structures based on polymorphic films of gallium oxide is studied. Both types of Ga$_{2}$O$_{3}$ films were obtained by the method of chloride vapor-phase epitaxy on smooth and structured sapphire substrates with orientation (0001). In the same process $\alpha$-Ga$_{2}$O$_{3}$ films were deposited on smooth substrates, and gallium oxide films, with regular structures perpendicular to the substrate, containing alternating regions of the $\alpha$- and $\varepsilon$-phases were deposited on patterned substrate. It's was observed, that radiation with $\lambda$ = 254 nm and strong electric transfer structures from a state with low resistance to a state with high resistance. The response time to UV radiation is 5 seconds, and the recovery time less than 1 s.
Keywords:
gallium oxide, HVPE, polymorphism, ultraviolet, volt-ampere characteristics.
Received: 27.05.2020 Revised: 02.06.2020 Accepted: 02.06.2020
Citation:
V. M. Kalygina, V. I. Nikolaev, A. V. Almaev, A. V. Tsymbalov, V. V. Kopyev, Yu. S. Petrova, I. A. Pechnikov, P. N. Butenko, “Effect of ultraviolet radiation and electric field on the conductivity of structures based on $\alpha$- and $\varepsilon$-Ga$_{2}$O$_{3}$”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1035–1040; Semiconductors, 54:10 (2020), 1224–1229
Linking options:
https://www.mathnet.ru/eng/phts5135 https://www.mathnet.ru/eng/phts/v54/i10/p1035
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