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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 10, Pages 1004–1010
DOI: https://doi.org/10.21883/FTP.2020.10.49935.9411 (Mi phts5131) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Surface, interfaces, thin films

Structure and photoelectric properties of PbSe films deposited in the presence of ascorbic acid

L. N. Maskaevaab, V. M. Yurka, V. F. Markovab, M. V. Kuznetsovc, V. I. Voronind, O. A. Lipinac

a Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
b Ural Institute of the State Fire Service
c Institute of Solid State Chemistry, Urals Branch of the Russian Academy of Sciences, Ekaterinburg
d Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg
Full-text PDF (845 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2020.10.49935.9411
Abstract: Lead selenide thin films produced by hydrochemical deposition with the use of ascorbic acid as an antioxidant of selenourea have been studied by X-ray diffraction analysis, scanning electron microscopy with elemental analysis, and X-ray photoelectron spectroscopy. The effect of the annealing temperature on the elemental composition of the films, their phase composition, crystal lattice parameters, surface morphology, and photoelectric properties has been determined. It is established that, after annealing at 633–683 K, the films contain the PbSeO$_{3}$, PbSeO$_{4}$ and PbI$_{2}$ impurity phases. The optical band gap $E_g$ of the layers in the cases of indirect and direct transitions has been determined. It has been shown that, in terms of their threshold photoelectric characteristics, the deposited films are comparable to widely known commercial samples and can be used to produce highly sensitive infrared detectors.
Keywords: chemical deposition, thin films, lead selenide, thermosensitization, photosensitive properties.
Funding agency Grant number
Правительство Российской Федерации 02.А03.21.0006
Russian Foundation for Basic Research 20-48-660041 р_а
Ministry of Education and Science of the Russian Federation А-19-1190318.90025-9
Russian Academy of Sciences - Federal Agency for Scientific Organizations АААА-А18-118020190112-8
The study was supported by the Government of the Russian Federation, program 211, project no. 02.A03.21.0006; the Russian Foundation for Basic Research, project no. 20-48-660041 r_a; government plan task АААА-А19-119031890025-9 , and the Federal Agency of Research Institutions of Russia, government order, theme “Potok” no. AAAA-A18-118020190112-8.
Received: 13.04.2020
Revised: 16.04.2020
Accepted: 25.04.2020
English version:
Semiconductors, 2020, Volume 54, Issue 10, Pages 1191–1197
DOI: https://doi.org/10.1134/S106378262010022X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: L. N. Maskaeva, V. M. Yurk, V. F. Markov, M. V. Kuznetsov, V. I. Voronin, O. A. Lipina, “Structure and photoelectric properties of PbSe films deposited in the presence of ascorbic acid”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1004–1010; Semiconductors, 54:10 (2020), 1191–1197
Citation in format AMSBIB
\Bibitem{MasYurMar20}
\by L.~N.~Maskaeva, V.~M.~Yurk, V.~F.~Markov, M.~V.~Kuznetsov, V.~I.~Voronin, O.~A.~Lipina
\paper Structure and photoelectric properties of PbSe films deposited in the presence of ascorbic acid
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 10
\pages 1004--1010
\mathnet{http://mi.mathnet.ru/phts5131}
\crossref{https://doi.org/10.21883/FTP.2020.10.49935.9411}
\elib{https://elibrary.ru/item.asp?id=44041208}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 10
\pages 1191--1197
\crossref{https://doi.org/10.1134/S106378262010022X}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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