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This article is cited in 3 scientific papers (total in 3 papers)
Electronic properties of semiconductors
Features of the electrical-conductivity mechanism in $\gamma$-irradiated TlInSe$_{2}$ single crystals under hydrostatic pressure
R. S. Madatovab, Sh. G. Gasimovc, S. S. Babaevc, A. S. Alekperovd, I. M. Movsumovae, S. H. Jabarovad a Institute of radiation problems, ANAS
b Национальная авиационная академия, Az-1045 Баку, Азербайджан
c Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
d Azerbaijan State Pedagogical University, Baku, Azerbaijan
e Ganja State University
Abstract:
The effect of hydrostatic pressure to 10 kbar on the conductivity of $\gamma$-irradiated chain TlInSe$_2$ single crystals with a resistivity of $\sim$10$^8$ $\Omega$ cm is studied. It is found that the observed conductivity anomalies of TlInSe$_2$ samples irradiated at doses of $D<$ 100 krad and $D>$ 100 krad are associated with the ordered transformation of defects including interstitial cations and anions. The nature of the anomalous change and pressure dependences of the resistivity $\sigma(P)$ in the irradiated samples suggest that pressure causes local energy levels due to macroscopic clusters of radiation-induced defects, with the result that the Fermi-level energy and carrier concentration change.
Keywords:
hydrostatic pressure, electrical conductivity, chain single crystals, $\gamma$-irradiation, radiation-induced defects, baric dependence.
Received: 15.05.2020 Revised: 01.06.2020 Accepted: 15.06.2020
Citation:
R. S. Madatov, Sh. G. Gasimov, S. S. Babaev, A. S. Alekperov, I. M. Movsumova, S. H. Jabarov, “Features of the electrical-conductivity mechanism in $\gamma$-irradiated TlInSe$_{2}$ single crystals under hydrostatic pressure”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 997–1002; Semiconductors, 54:10 (2020), 1180–1184
Linking options:
https://www.mathnet.ru/eng/phts5130 https://www.mathnet.ru/eng/phts/v54/i10/p997
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