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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 10, Pages 997–1002
DOI: https://doi.org/10.21883/FTP.2020.10.49933.9439
(Mi phts5130)
 

This article is cited in 3 scientific papers (total in 3 papers)

Electronic properties of semiconductors

Features of the electrical-conductivity mechanism in $\gamma$-irradiated TlInSe$_{2}$ single crystals under hydrostatic pressure

R. S. Madatovab, Sh. G. Gasimovc, S. S. Babaevc, A. S. Alekperovd, I. M. Movsumovae, S. H. Jabarovad

a Institute of radiation problems, ANAS
b Национальная авиационная академия, Az-1045 Баку, Азербайджан
c Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
d Azerbaijan State Pedagogical University, Baku, Azerbaijan
e Ganja State University
Full-text PDF (330 kB) Citations (3)
Abstract: The effect of hydrostatic pressure to 10 kbar on the conductivity of $\gamma$-irradiated chain TlInSe$_2$ single crystals with a resistivity of $\sim$10$^8$ $\Omega$ cm is studied. It is found that the observed conductivity anomalies of TlInSe$_2$ samples irradiated at doses of $D<$ 100 krad and $D>$ 100 krad are associated with the ordered transformation of defects including interstitial cations and anions. The nature of the anomalous change and pressure dependences of the resistivity $\sigma(P)$ in the irradiated samples suggest that pressure causes local energy levels due to macroscopic clusters of radiation-induced defects, with the result that the Fermi-level energy and carrier concentration change.
Keywords: hydrostatic pressure, electrical conductivity, chain single crystals, $\gamma$-irradiation, radiation-induced defects, baric dependence.
Received: 15.05.2020
Revised: 01.06.2020
Accepted: 15.06.2020
English version:
Semiconductors, 2020, Volume 54, Issue 10, Pages 1180–1184
DOI: https://doi.org/10.1134/S1063782620100206
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. S. Madatov, Sh. G. Gasimov, S. S. Babaev, A. S. Alekperov, I. M. Movsumova, S. H. Jabarov, “Features of the electrical-conductivity mechanism in $\gamma$-irradiated TlInSe$_{2}$ single crystals under hydrostatic pressure”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 997–1002; Semiconductors, 54:10 (2020), 1180–1184
Citation in format AMSBIB
\Bibitem{MadGasBab20}
\by R.~S.~Madatov, Sh.~G.~Gasimov, S.~S.~Babaev, A.~S.~Alekperov, I.~M.~Movsumova, S.~H.~Jabarov
\paper Features of the electrical-conductivity mechanism in $\gamma$-irradiated TlInSe$_{2}$ single crystals under hydrostatic pressure
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 10
\pages 997--1002
\mathnet{http://mi.mathnet.ru/phts5130}
\crossref{https://doi.org/10.21883/FTP.2020.10.49933.9439}
\elib{https://elibrary.ru/item.asp?id=44041207}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 10
\pages 1180--1184
\crossref{https://doi.org/10.1134/S1063782620100206}
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  • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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