Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 11, Pages 1219–1223
DOI: https://doi.org/10.21883/FTP.2020.11.50091.9461 (Mi phts5123) 		 
Semiconductor structures, low-dimensional systems, quantum phenomena

Dependence of the electrophysical characteristics of metal–ferroelectric–semiconductor structures on the field-electrode material

M. S. Afanasieva, D. A. Belorusova, D. A. Kiselevab, A. A. Sivova, G. V. Chuchevaa

a Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
b National University of Science and Technology «MISIS», Moscow
Full-text PDF (529 kB)
DOI: https://doi.org/10.21883/FTP.2020.11.50091.9461
Abstract: Films of the composition Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$ (BST 80/20) are synthesized on a silicon substrate by the method of the high-frequency sputtering of a polycrystalline target. The results of investigations of the film composition, the electrophysical properties of capacitor structures based on them, and the dependence of these properties on the material (Al, Cu, Ni, Cr) of the upper electrode are presented.
Keywords: metal–dielectric–semiconductor structures, ferroelectric films of Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$ composition, microstructure, electrophysical properties.
Funding agency Grant number
Russian Foundation for Basic Research 18-29-11029
19-07-00271
19-29-03042
This study was carried out within the framework of the state assignment and was partially supported by the Russian Foundation for Basic Research, project nos. 18-29-11029, 19-07-00271, and 19-29-03042.
Received: 08.06.2020
Revised: 13.07.2020
Accepted: 13.07.2020
English version:
Semiconductors, 2020, Volume 54, Issue 11, Pages 1445–1449
DOI: https://doi.org/10.1134/S1063782620110032
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. S. Afanasiev, D. A. Belorusov, D. A. Kiselev, A. A. Sivov, G. V. Chucheva, “Dependence of the electrophysical characteristics of metal–ferroelectric–semiconductor structures on the field-electrode material”, Fizika i Tekhnika Poluprovodnikov, 54:11 (2020), 1219–1223; Semiconductors, 54:11 (2020), 1445–1449
Citation in format AMSBIB
\Bibitem{AfaBelKis20}
\by M.~S.~Afanasiev, D.~A.~Belorusov, D.~A.~Kiselev, A.~A.~Sivov, G.~V.~Chucheva
\paper Dependence of the electrophysical characteristics of metal--ferroelectric--semiconductor structures on the field-electrode material
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 11
\pages 1219--1223
\mathnet{http://mi.mathnet.ru/phts5123}
\crossref{https://doi.org/10.21883/FTP.2020.11.50091.9461}
\elib{https://elibrary.ru/item.asp?id=44154073}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 11
\pages 1445--1449
\crossref{https://doi.org/10.1134/S1063782620110032}
Linking options:
  • https://www.mathnet.ru/eng/phts5123
  • https://www.mathnet.ru/eng/phts/v54/i11/p1219
    • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:50
    Full-text PDF :22
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024