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This article is cited in 7 scientific papers (total in 7 papers)
Surface, interfaces, thin films
Fabrication of a Ge–GeS:Nd heterojunction and investigation of the spectral characteristics
A. S. Alekperova, A. O. Dashdemirova, N. A. Ismayilovab, S. H. Jabarovac a N. Tusi Azerbaijan State Pedagogical University, Baku, Azerbaijan
b Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
c Institute of radiation problems, ANAS, Baku, Azerbaijan
Abstract:
The technology of producing a Ge–GeS:Nd heterojunction and the relative spectral characteristics of the quantum efficiency of the fabricated heterojunction are investigated at different $\gamma$-irradiation doses. It is found that the photosensitivity increases at a dose of 30 krad in the spectral range of 0.4–2.0 $\mu$m. With increasing the radiation dose to 100 krad, the heterojunction photosensitivity decreases significantly.
Keywords:
layered single crystal, heterojunction, photosensitivity, $\gamma$ radiation, quantum efficiency, spectral characteristic.
Received: 06.04.2020 Revised: 12.04.2020 Accepted: 23.06.2020
Citation:
A. S. Alekperov, A. O. Dashdemirov, N. A. Ismayilova, S. H. Jabarov, “Fabrication of a Ge–GeS:Nd heterojunction and investigation of the spectral characteristics”, Fizika i Tekhnika Poluprovodnikov, 54:11 (2020), 1193–1196; Semiconductors, 54:11 (2020), 1406–1409
Linking options:
https://www.mathnet.ru/eng/phts5119 https://www.mathnet.ru/eng/phts/v54/i11/p1193
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