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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 11, Pages 1193–1196
DOI: https://doi.org/10.21883/FTP.2020.11.50085.9401 (Mi phts5119) 		 
This article is cited in 7 scientific papers (total in 7 papers)

Surface, interfaces, thin films

Fabrication of a Ge–GeS:Nd heterojunction and investigation of the spectral characteristics

A. S. Alekperova, A. O. Dashdemirova, N. A. Ismayilovab, S. H. Jabarovac

a N. Tusi Azerbaijan State Pedagogical University, Baku, Azerbaijan
b Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
c Institute of radiation problems, ANAS, Baku, Azerbaijan
Full-text PDF (402 kB) Citations (7)
DOI: https://doi.org/10.21883/FTP.2020.11.50085.9401
Abstract: The technology of producing a Ge–GeS:Nd heterojunction and the relative spectral characteristics of the quantum efficiency of the fabricated heterojunction are investigated at different $\gamma$-irradiation doses. It is found that the photosensitivity increases at a dose of 30 krad in the spectral range of 0.4–2.0 $\mu$m. With increasing the radiation dose to 100 krad, the heterojunction photosensitivity decreases significantly.
Keywords: layered single crystal, heterojunction, photosensitivity, $\gamma$ radiation, quantum efficiency, spectral characteristic.
Received: 06.04.2020
Revised: 12.04.2020
Accepted: 23.06.2020
English version:
Semiconductors, 2020, Volume 54, Issue 11, Pages 1406–1409
DOI: https://doi.org/10.1134/S1063782620110044
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. S. Alekperov, A. O. Dashdemirov, N. A. Ismayilova, S. H. Jabarov, “Fabrication of a Ge–GeS:Nd heterojunction and investigation of the spectral characteristics”, Fizika i Tekhnika Poluprovodnikov, 54:11 (2020), 1193–1196; Semiconductors, 54:11 (2020), 1406–1409
Citation in format AMSBIB
\Bibitem{AleDasIsm20}
\by A.~S.~Alekperov, A.~O.~Dashdemirov, N.~A.~Ismayilova, S.~H.~Jabarov
\paper Fabrication of a Ge--GeS:Nd heterojunction and investigation of the spectral characteristics
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 11
\pages 1193--1196
\mathnet{http://mi.mathnet.ru/phts5119}
\crossref{https://doi.org/10.21883/FTP.2020.11.50085.9401}
\elib{https://elibrary.ru/item.asp?id=44154069}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 11
\pages 1406--1409
\crossref{https://doi.org/10.1134/S1063782620110044}
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  • https://www.mathnet.ru/eng/phts/v54/i11/p1193
    • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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