Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 11, Pages 1193–1196
DOI: https://doi.org/10.21883/FTP.2020.11.50085.9401 (Mi phts5119) 		 
This article is cited in 9 scientific papers (total in 9 papers)

Surface, interfaces, thin films

Fabrication of a Ge–GeS:Nd heterojunction and investigation of the spectral characteristics

A. S. Alekperova, A. O. Dashdemirova, N. A. Ismayilovab, S. H. Jabarovac

a N. Tusi Azerbaijan State Pedagogical University, Baku, Azerbaijan
b Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
c Institute of radiation problems, ANAS, Baku, Azerbaijan
Full-text PDF (402 kB) Citations (9)
DOI: https://doi.org/10.21883/FTP.2020.11.50085.9401
Abstract: The technology of producing a Ge–GeS:Nd heterojunction and the relative spectral characteristics of the quantum efficiency of the fabricated heterojunction are investigated at different $\gamma$-irradiation doses. It is found that the photosensitivity increases at a dose of 30 krad in the spectral range of 0.4–2.0 $\mu$m. With increasing the radiation dose to 100 krad, the heterojunction photosensitivity decreases significantly.
Keywords: layered single crystal, heterojunction, photosensitivity, $\gamma$ radiation, quantum efficiency, spectral characteristic.
Received: 06.04.2020
Revised: 12.04.2020
Accepted: 23.06.2020
English version:
Semiconductors, 2020, Volume 54, Issue 11, Pages 1406–1409
DOI: https://doi.org/10.1134/S1063782620110044
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. S. Alekperov, A. O. Dashdemirov, N. A. Ismayilova, S. H. Jabarov, “Fabrication of a Ge–GeS:Nd heterojunction and investigation of the spectral characteristics”, Fizika i Tekhnika Poluprovodnikov, 54:11 (2020), 1193–1196; Semiconductors, 54:11 (2020), 1406–1409
Citation in format AMSBIB
\Bibitem{AleDasIsm20}
\by A.~S.~Alekperov, A.~O.~Dashdemirov, N.~A.~Ismayilova, S.~H.~Jabarov
\paper Fabrication of a Ge--GeS:Nd heterojunction and investigation of the spectral characteristics
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 11
\pages 1193--1196
\mathnet{http://mi.mathnet.ru/phts5119}
\crossref{https://doi.org/10.21883/FTP.2020.11.50085.9401}
\elib{https://elibrary.ru/item.asp?id=44154069}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 11
\pages 1406--1409
\crossref{https://doi.org/10.1134/S1063782620110044}
Linking options:
  • https://www.mathnet.ru/eng/phts5119
  • https://www.mathnet.ru/eng/phts/v54/i11/p1193
    • This publication is cited in the following 9 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:45
    Full-text PDF :35
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024