Structure, content and properties of Zn and O ion hot implanted silicon

The Czochralski growth Si (100) substrates were implantation by $^{64}$Zn$^{+}$ ions with dose of 5 $\times$ 10$^{16}$ cm$^{-2}$ and energy of 50 keV and then by the $^{16}$O$^{+}$ ions with dose of 2 $\times$ 10$^{17}$ cm$^{-2}$ and energy of 20 keV. During implantation the substrate temperature was about 350$^\circ$C. Then, the substrates were cut into 10 $\times$ 10mm samples, and were subjected to isochronous (for 20 min) photonic annealing in vacuum. At each stage of photon annealing, the effective temperature was varied from 500 up to 900$^\circ$C with a step of 100$^\circ$C. After implantation the radiation-induced point defects and their clusters are formed in the subsurface layer, twin grains, dislocations, as well as Zn-containing clusters (mainly of Zn and ZnO composition) with an average size of 10–20 nm and an average size of 20–50 nm on Si substrate surface. As the annealing proceeds, the radiation defects gradually disappear, and after annealing at an effective temperature of 700$^\circ$C the Zn-containing clusters (presumably consisted of ZnO phase and particularly of Zn$_{2}$SiO$_{4}$ phase) with a size of about 100 nm are revealed in the surface layer and on the Si substrate surface.