Characteristics of Schottky rectifier diodes based on silicon carbide at elevated temperatures

Forward and reverse current–voltage characteristics of commercial rectifier diodes based on a Schottky barrier to 4$H$-SiC are studied in the temperature range 20–370$^{\circ}$C at a maximum current of 10–20 mA and maximum voltage of 10–100V. It is found that the diodes can be considered nearly ideal with a Schottky-barrier height of $\sim$1.5 eV, with the forward current over the entire temperature range and the reverse current at high temperatures being largely due to thermionic emission. The upper limit of the working temperature range of 4$H$-SiC-based Schottky rectifier diodes at the currents and voltages under study approximately corresponds to the fundamental limit determined by the barrier height. In the reported experiment it reaches 370$^{\circ}$C.