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This article is cited in 1 scientific paper (total in 1 paper)
Carbon systems
Carbon nanotube nanomesh films with X-shaped junctions for electronic and photovoltaic applications
O. E. Glukhova, M. M. Slepchenkov, K. R. Asanov Saratov State University
Abstract:
The atomic structure, electronic and optoelectronic properties of nanosized films of carbon nanotubes with seamless cross-shaped X- junctions are studied. It is established that the topology of the arrangement of non-hexagonal elements in the contact region of nanotubes determines the energy stability of the atomic structure. It is revealed that the pore size of the film determines the type of conductivity. At the smallest pore sizes, the film is characterized by a metallic type of conductivity; with an increase in pore size, the gap in the band structure also increases and the film becomes semiconductor. Films with a minimum gap size exhibit good photovoltaic properties. The photocurrent for the considered film models can reach 2.4 mA cm$^{-2}$ in the atmosphere and 3.25 mA cm$^{-2}$ outside the atmosphere. The presence of a gap in the band structure makes nanosized films promising for nanoelectronics and optoelectronics.
Keywords:
nanomeshes, carbon nanotubes, absorption spectrum, electrical conductivity, photocurrent.
Received: 17.02.2020 Revised: 03.08.2020 Accepted: 10.08.2020
Citation:
O. E. Glukhova, M. M. Slepchenkov, K. R. Asanov, “Carbon nanotube nanomesh films with X-shaped junctions for electronic and photovoltaic applications”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1355–1363; Semiconductors, 54:12 (2020), 1616–1623
Linking options:
https://www.mathnet.ru/eng/phts5111 https://www.mathnet.ru/eng/phts/v54/i12/p1355
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