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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 12, Pages 1350–1354
DOI: https://doi.org/10.21883/FTP.2020.12.50236.9500
(Mi phts5110)
 

This article is cited in 2 scientific papers (total in 2 papers)

Micro- and nanocrystalline, porous, composite semiconductors

Band gap of (In$_{2}$S$_3$)$_{x}$(AgIn$_{5}$S$_8$)$_{1-x}$ single-crystal alloys

I. V. Bondar', A. A. Feshchenko, V. V. Khoroshko

Belarussian State University of Computer Science and Radioelectronic Engineering
Full-text PDF (268 kB) Citations (2)
Abstract: In$_{2}$S$_{3}$, AgIn$_{5}$S$_{8}$, and (In$_{2}$S$_3$)$_{x}$(AgIn$_{5}$S$_8$)$_{1-x}$-alloy single crystals are grown by the Bridgman method. The composition and structure of the crystals are determined. It is established that both the initial compounds and their alloys crystalize with the formation of the cubic spinel structure. The unit-cell parameters of the single crystals are calculated, and the dependences of these parameters on the alloy composition are constructed. It is shown that, in the system, Vegard's law is satisfied. The transmittance spectra of the crystals in the region of the fundamental absorption edge are studied at room temperature, and the band gap $(E_g)$ is determined. It is shown that $E_g$ varies with the composition parameter $x$, with some deviation from a linear dependence.
Keywords: single crystals, crystal structure, alloys, transmittance spectra, band gap.
Funding agency Grant number
Belarusian Republican Foundation for Fundamental Research Т20МВ-007
The study was supported by the Belorusian Republican Foundation of Fundamental Research, project no. F16-028.
Received: 10.08.2020
Revised: 15.08.2020
Accepted: 15.08.2020
English version:
Semiconductors, 2020, Volume 54, Issue 12, Pages 1611–1615
DOI: https://doi.org/10.1134/S1063782620120039
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. V. Bondar', A. A. Feshchenko, V. V. Khoroshko, “Band gap of (In$_{2}$S$_3$)$_{x}$(AgIn$_{5}$S$_8$)$_{1-x}$ single-crystal alloys”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1350–1354; Semiconductors, 54:12 (2020), 1611–1615
Citation in format AMSBIB
\Bibitem{BonFesKho20}
\by I.~V.~Bondar', A.~A.~Feshchenko, V.~V.~Khoroshko
\paper Band gap of (In$_{2}$S$_3$)$_{x}$(AgIn$_{5}$S$_8$)$_{1-x}$ single-crystal alloys
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 12
\pages 1350--1354
\mathnet{http://mi.mathnet.ru/phts5110}
\crossref{https://doi.org/10.21883/FTP.2020.12.50236.9500}
\elib{https://elibrary.ru/item.asp?id=44368070}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 12
\pages 1611--1615
\crossref{https://doi.org/10.1134/S1063782620120039}
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  • https://www.mathnet.ru/eng/phts/v54/i12/p1350
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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