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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 12, Pages 1302–1308
DOI: https://doi.org/10.21883/FTP.2020.12.50229.9497 (Mi phts5104) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Electronic properties of semiconductors

Optical and structural properties of HgCdTe solid solutions with a high CdTe content

K. J. Mynbaeva, N. L. Bazhenova, A. M. Smirnovb, N. N. Mikhailovc, V. G. Remesnikc, M. V. Yakushevc

a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Full-text PDF (446 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2020.12.50229.9497
Abstract: This work presents the results of studying the optical transmission, photoconductivity, photoluminescence, and X-ray diffraction of HgCdTe solid solution samples with a high (molar fraction 0.7–0.8) CdTe content, grown by molecular beam (MBE) and liquid-phase (LPE) epitaxy. It was shown that the studied material had a significant degree of disordering of the solid solution, which was greater in structures grown by MBE on GaAs substrates than in films grown by LPE. Photoluminescence studies have revealed states in the band gap, which were previously considered not typical of HgCdTe films grown on GaAs substrates, but only of films grown on Si. On the whole, the high quality of the material with a high CdTe content, grown by MBE and used to create the currently widely demanded HgTe/HgCdTe nanostructures, was confirmed.
Keywords: HgCdTe, photoluminescence, defects, structural properties.
Received: 03.08.2020
Revised: 10.08.2020
Accepted: 10.08.2020
English version:
Semiconductors, 2020, Volume 54, Issue 12, Pages 1561–1566
DOI: https://doi.org/10.1134/S1063782620120258
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: K. J. Mynbaev, N. L. Bazhenov, A. M. Smirnov, N. N. Mikhailov, V. G. Remesnik, M. V. Yakushev, “Optical and structural properties of HgCdTe solid solutions with a high CdTe content”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1302–1308; Semiconductors, 54:12 (2020), 1561–1566
Citation in format AMSBIB
\Bibitem{MynBazSmi20}
\by K.~J.~Mynbaev, N.~L.~Bazhenov, A.~M.~Smirnov, N.~N.~Mikhailov, V.~G.~Remesnik, M.~V.~Yakushev
\paper Optical and structural properties of HgCdTe solid solutions with a high CdTe content
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 12
\pages 1302--1308
\mathnet{http://mi.mathnet.ru/phts5104}
\crossref{https://doi.org/10.21883/FTP.2020.12.50229.9497}
\elib{https://elibrary.ru/item.asp?id=44368064}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 12
\pages 1561--1566
\crossref{https://doi.org/10.1134/S1063782620120258}
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  • https://www.mathnet.ru/eng/phts/v54/i12/p1302
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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