Thin-film baroresistors based on Sm$_{1-x}$Gd$_{x}$S solid solutions

The effect of the Gd concentration on the temperature and pressure coefficients of the resistance of thin polycrystalline films of Sm$_{1-x}$Gd$_{x}$S solid solutions, where $x$ = 0, 0.05, 0.1, 0.2, 0.33, and 0.5 is studied. The films are grown by explosive evaporation in vacuum of powders of the initial compounds and sedimentation of the latter from the gas phase onto glass substrates. The dependences of the temperature $\alpha$ and pressure $\beta$ coefficients of the resistance are determined, as well as their ratios $\gamma$ on the Gd concentration $x$ in the system of SmS–GdS solid solutions, based on which the optimum compositions for fabricating thin-film piezoresistors and baroresistors are determined.