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This article is cited in 2 scientific papers (total in 2 papers)
Non-electronic properties of semiconductors (atomic structure, diffusion)
Local structure and anti-structural defects of tin in amorphous and crystalline Ge$_{2}$Sb$_{2}$Te$_{5}$ films
A. V. Marchenkoa, E. I. Terukovbc, F. S. Nasredinovd, Yu. A. Petrushina, P. P. Seregina a Herzen State Pedagogical University of Russia, St. Petersburg, Russia
b Ioffe Institute, St. Petersburg, Russia
c Saint Petersburg Electrotechnical University "LETI", St. Petersburg, Russia
d Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russia
Abstract:
The absorption Mössbauer spectroscopy on $^{119}$Sn impurity centers shows that germanium atoms in the structure of amorphous and polycrystalline Ge$_{2}$Sb$_{2}$Te$_{5}$ films have different local symmetries (tetrahedral in the amorphous phase and octahedral in the crystalline). By emission Mössbauer spectroscopy on $^{119 m}$Sn impurity centers formed after the radioactive decay of $^{119}$Sb or $^{119m}$ Te parent atoms, tin antisite defects at antimony and tellurium sites of crystalline Ge$_{2}$Sb$_{2}$Te$_{5}$ films are identified.
Keywords:
anti-structural defects, Mössbauer spectroscopy, Ge$_{2}$Sb$_{2}$Te$_{5}$.
Received: 21.09.2020 Revised: 23.09.2020 Accepted: 23.09.2020
Citation:
A. V. Marchenko, E. I. Terukov, F. S. Nasredinov, Yu. A. Petrushin, P. P. Seregin, “Local structure and anti-structural defects of tin in amorphous and crystalline Ge$_{2}$Sb$_{2}$Te$_{5}$ films”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 3–8; Semiconductors, 55:1 (2021), 1–6
Linking options:
https://www.mathnet.ru/eng/phts5089 https://www.mathnet.ru/eng/phts/v55/i1/p3
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